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Product Detailed Parameters
- Description：MOSFET P-CH 30V 9A/39.5A TSDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：9A (Ta), 39.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
- Rds On (Max) @ Id, Vgs：18mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：3.1V @ 48µA
- Gate Charge (Qg) (Max) @ Vgs：30 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：2220 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.1W (Ta), 40W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TSDSON-8
- Package / Case：8-PowerTDFN
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Overview
The BSZ180P03NS3EGATMA1 is a P-Channel power MOSFET from Infineon Technologies, part of the OptiMOS P3 family. It features a -30 V drain-source voltage and a continuous drain current of 9 A at Ta or 39.5 A at Tc. The device utilizes a PG-TSDSON-8 surface-mount package with a silicon technology base. Key electrical characteristics include a maximum on-resistance of 8.6 mΩ at 10 V gate drive and a typical gate charge of 43.2 nC. It supports an operating temperature range from -55 °C to +150 °C with a total power dissipation of up to 69 W.
Feature Summary
- Engineered for high-efficiency power switching applications
- Delivers superior performance through robust power MOSFET technology
- Optimized for low conduction losses in compact packages
Applications
- High-efficiency power switching circuits
- DC-DC converter modules
- Power management systems requiring compact form factors
Procurement Notes
Verify the exact ordering suffix and tape/reel specifications against the official Infineon datasheet before procurement. Confirm that the PG-TSDSON-8 package dimensions match your PCB footprint requirements. Ensure thermal management solutions account for the specified power dissipation limits under your specific operating conditions. Cross-reference the RoHS compliance status with current regulatory standards.
Selection Notes
Select this component when a P-Channel MOSFET with low on-resistance and high current capability in a small outline package is required. Compare the 8.6 mΩ Rds(on) and 43.2 nC Qg values against alternative devices to ensure optimal efficiency for your specific switching frequency and load requirements. Consider the thermal resistance characteristics for your enclosure design.
Part Context
This device belongs to the OptiMOS P3 family of P-channel power MOSFETs by Infineon Technologies. These components are designed to replace older generation technologies, offering improved figure-of-merit metrics. The PG-TSDSON-8 package provides a balance between thermal performance and board space efficiency, suitable for modern consumer and industrial electronics.
Replacement Considerations
Check for direct pin-compatible substitutes within the same OptiMOS P3 series, such as variants with different voltage or current ratings if system margins allow. Verify that any replacement maintains the same PG-TSDSON-8 footprint and thermal characteristics to avoid PCB redesign.
FAQ
What is the maximum drain-source voltage for this device?
The maximum drain-source voltage (Vds) is -30 V.
What is the typical gate charge value?
The typical gate charge (Qg) is 43.2 nC at a gate-source voltage of 10 V.
What package type does this MOSFET use?
It uses the PG-TSDSON-8 surface-mount package.
