BSZ180P03NS3GATMA1

$0.71

Description：MOSFET P-CH 30V 9A/39.6A TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:b3bc048c3e01 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 9A/39.6A TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：9A (Ta), 39.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：18mOhm @ 20A, 10V
Vgs(th) (Max) @ Id：3.1V @ 48µA
Gate Charge (Qg) (Max) @ Vgs：30 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：2220 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.1W (Ta), 40W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TSDSON-8
Package / Case：8-PowerTDFN

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BSZ180P03NS3GATMA1

Overview

The BSZ180P03NS3GATMA1 is a single P-channel power MOSFET from Infineon Technologies, utilizing OptiMOS P3 technology. It features a drain-source voltage (Vds) of -30 V and a continuous drain current (Id) of 9 A at 25°C. The device exhibits a maximum on-resistance (Rds(on)) of 18 mΩ at Vgs = -10 V. It operates within a temperature range of -55°C to +150°C and is housed in a TSDSON-8 surface-mount package.

Feature Summary

OptiMOS P3 technology for optimized switching performance
Low on-resistance for efficient power handling
Enhanced thermal stability up to 150°C junction temperature

Applications

DC-DC converter circuits
Power management modules
Motor control applications

Procurement Notes

Verify the specific suffix ATMA1 against official datasheets to confirm tape-and-reel packaging specifications. Ensure compatibility with standard SMD reflow soldering profiles for TSDSON-8 packages. Cross-reference RoHS compliance status directly with manufacturer documentation prior to integration.

Selection Notes

Select this component for low-voltage, high-current P-channel switching requirements where compact footprint is critical. Compare Rds(on) values against alternative -30V devices to ensure optimal conduction losses. Validate gate drive voltage levels against the specified -10 V threshold for full enhancement.

Part Context

This part belongs to the OptiMOS P3 family, designed for automotive and industrial power applications. It complements N-channel counterparts like the BSZ440N10NS3G series within the same TSDSON-8 form factor, enabling complementary bridge configurations in compact power stages.