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Product Detailed Parameters
- Description：MOSFET N-CH 120V 37A 8TSDSON
- Series：OptiMOS™
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：120 V
- Current - Continuous Drain (Id) @ 25°C：37A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：24mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id：4V @ 35µA
- Gate Charge (Qg) (Max) @ Vgs：27 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1900 pF @ 60 V
- FET Feature：-
- Power Dissipation (Max)：66W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TSDSON-8
- Package / Case：8-PowerTDFN
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Overview
The BSZ240N12NS3GATMA1 is a single N-channel Power MOSFET from Infineon Technologies, utilizing OptiMOS 3 technology. It features a TSDSON-8 surface-mount package and operates with a drain-source voltage of 120 V and a continuous drain current of 37 A at 25°C. The device exhibits a maximum on-resistance of 240 mΩ at a gate-source voltage of 10 V. It supports an operating temperature range from -55°C to +150°C and includes thermal shutdown protection.
Feature Summary
- OptiMOS 3 technology provides optimized performance for low-voltage power switching applications.
- Integrated thermal shutdown protection safeguards the component against overheating during operation.
- TSDSON-8 package design facilitates efficient heat dissipation and compact board integration.
Applications
- DC-DC converter modules
- Motor control circuits
- Power management systems
Procurement Notes
Verify the complete part number including the ATMA1 suffix to ensure correct tape-and-reel packaging configuration. Confirm that the requested quantity aligns with standard reel sizes or cut-tape availability. Cross-reference the manufacturer datasheet for specific handling and storage conditions required for this semiconductor component.
Selection Notes
Select this component when a 120 V rating and approximately 37 A continuous current capability are required in a small footprint. The 240 mΩ on-resistance offers a balance between conduction losses and cost. Ensure the application environment remains within the specified -55°C to +150°C junction temperature limits for reliable long-term operation.
Part Context
This part belongs to the OptiMOS 3 family, which represents Infineon's silicon-based MOSFET technology designed for efficiency and reliability. The TSDSON-8 package is a thermally enhanced surface-mount option suitable for high-density PCB layouts. It serves as a discrete solution for power stages where integrated smart power levels are not required.
Replacement Considerations
Direct replacements must match the 120 V / 37 A / 240 mΩ specifications and TSDSON-8 package. Verify pinout compatibility and thermal resistance characteristics before substitution. Consult official cross-reference lists for confirmed equivalent parts.
