BSZ340N08NS3GATMA1

$0.37

Description：MOSFET N-CH 80V 6A/23A 8TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:4a92e11b7829 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 80V 6A/23A 8TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：6A (Ta), 23A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：34mOhm @ 12A, 10V
Vgs(th) (Max) @ Id：3.5V @ 12µA
Gate Charge (Qg) (Max) @ Vgs：9.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：630 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：2.1W (Ta), 32W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TSDSON-8
Package / Case：8-PowerTDFN

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BSZ340N08NS3GATMA1

Overview

The BSZ340N08NS3GATMA1 is an N-channel OptiMOS 3 power transistor manufactured by Infineon Technologies. It features a PG-TSDSON-8 package and operates with a drain-source voltage of 80 V. The device supports a continuous drain current of 23 A at 25 °C case temperature, with a maximum on-state resistance of 34 mΩ at VGS=10 V. Total gate charge is typically 6.8 nC. Thermal resistance from junction to case is 3.9 K/W, and the operating temperature range spans from -55 °C to +150 °C.

Feature Summary

Optimized technology for DC/DC converters
Excellent gate charge x RDS(on) product (FOM)
100% avalanche tested

Applications

High frequency switching
DC/DC converters

Procurement Notes

Verify the component against official Infineon datasheets to confirm authenticity and technical compliance. Ensure that the specific ordering suffix matches the required packaging configuration. Cross-reference part numbers with authorized distributors to validate supply chain integrity before procurement.

Selection Notes

Select this component for applications requiring high-frequency switching efficiency within an 80 V system. Evaluate thermal management requirements based on the specified junction-to-case resistance. Confirm that the gate drive voltage aligns with the optimal performance characteristics for low on-state resistance.

Part Context

This component belongs to the OptiMOS 3 family of power transistors designed for automotive and industrial applications. It utilizes silicon technology and complies with RoHS standards. The device is qualified according to JEDEC standards for target applications and is halogen-free.