BSZ42DN25NS3GATMA1

$0.92

Description：MOSFET N-CH 250V 5A TSDSON-8
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:b201c6b5a660 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 250V 5A TSDSON-8
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：250 V
Current - Continuous Drain (Id) @ 25°C：5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：425mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id：4V @ 13µA
Gate Charge (Qg) (Max) @ Vgs：5.5 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：430 pF @ 100 V
FET Feature：-
Power Dissipation (Max)：33.8W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TSDSON-8-2
Package / Case：8-PowerTDFN

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BSZ42DN25NS3GATMA1

Overview

The BSZ42DN25NS3GATMA1 is an N-channel enhancement mode power MOSFET from the OptiMOS 3 series, manufactured by Infineon Technologies. It features a PG-TSDSON-8 surface-mount package and utilizes silicon technology. The device supports a drain-source voltage of 250 V and delivers a continuous drain current of 5 A at 25 °C case temperature. Its maximum on-state resistance is 425 mΩ at VGS=10 V. Key electrical parameters include a gate threshold voltage range of 2 to 4 V, total gate charge of 5.5 nC, and a maximum power dissipation of 33.8 W. Operating temperatures span from -55 °C to +150 °C.

Feature Summary

Optimized for DC-DC conversion applications with excellent gate charge and on-resistance product.
Features low on-resistance and high transconductance for efficient switching performance.
Qualified according to JEDEC standards and compliant with RoHS and halogen-free requirements.

Applications

DC-DC converter circuits
Power management systems

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets all required environmental certifications, including RoHS compliance and halogen-free status, prior to integration into final designs.

Selection Notes

Select this component when designing for 250 V isolation requirements in compact surface-mount layouts. The TSDSON-8 package provides thermal efficiency suitable for moderate current loads up to 5 A. Ensure adequate PCB copper area for the drain connection to maintain thermal resistance within specified limits during operation.

Part Context

This part belongs to the OptiMOS 3 family of power transistors designed for general-purpose switching applications. It represents a standard silicon-based solution offering a balance between cost-effectiveness and performance metrics such as breakdown voltage and thermal stability for industrial electronics.