BSZ440N10NS3GATMA1

$0.77

Description：MOSFET N-CH 100V 5.3A/18A TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:9b1951e276bb Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 100V 5.3A/18A TSDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：5.3A (Ta), 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：6V, 10V
Rds On (Max) @ Id, Vgs：44mOhm @ 12A, 10V
Vgs(th) (Max) @ Id：2.7V @ 12µA
Gate Charge (Qg) (Max) @ Vgs：9.1 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：640 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：29W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PG-TSDSON-8
Package / Case：8-PowerTDFN

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BSZ440N10NS3GATMA1

Overview

The BSZ440N10NS3GATMA1 is an N-channel OptiMOS™3 power MOSFET with a 100V drain-source breakdown voltage. It supports an 18A continuous drain current and features a maximum on-resistance of 44mΩ at VGS=10V. The device operates within a temperature range of -55°C to +150°C, dissipating up to 29W. Key electrical parameters include a gate charge of 9.1nC, threshold voltage of 2V to 3.5V, and thermal resistance of 4.3K/W junction-to-case.

Feature Summary

Optimized for high-frequency applications through very low gate charge characteristics
Designed specifically for efficient DC-DC conversion circuits
Features excellent figure of merit combining low on-resistance with minimal gate charge

Applications

DC-DC converter modules
High-frequency power switching circuits
General purpose power management systems

Procurement Notes

Verify the component authenticity by checking the manufacturer marking against official datasheet specifications. Confirm package integrity and ensure compliance with RoHS and halogen-free requirements as documented. Cross-reference ordering codes to match exact suffix variations for tape and reel packaging configurations.

Selection Notes

Select this component when designing circuits requiring robust 100V blocking capability combined with moderate current handling. The low gate charge makes it suitable for driving stages where switching speed and drive power consumption are critical constraints. Ensure thermal design accommodates the specified junction-to-case resistance for reliable operation under load.

Part Context

This part belongs to Infineon's OptiMOS™3 family, utilizing silicon technology for power management applications. It is housed in a PG-TSDSON-8 surface-mount package designed for compact PCB layouts. The series emphasizes efficiency improvements over previous generations through optimized cell architecture.