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Product Detailed Parameters
- Description：MOSFET N CH 100V 22A TO-220AB
- Series：TEMPFET®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：100 V
- Current - Continuous Drain (Id) @ 25°C：22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V
- Rds On (Max) @ Id, Vgs：100mOhm @ 9.5A, 4.5V
- Vgs(th) (Max) @ Id：2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±10V
- Input Capacitance (Ciss) (Max) @ Vds：1500 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：95W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TO220-3-5
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The BTS121AE3045ANTMA1 is a logic-level N-channel enhancement-mode power MOSFET in the TEMPFET® family, manufactured by Infineon Technologies. It features a TO-220AB SMD package with three pins (Gate, Drain, Source). The device provides a drain-source voltage of 100 V and a continuous drain current of 22 A at 25 °C. Its maximum on-state resistance is 0.1 Ω, ensuring efficient switching. An integrated temperature sensor with thyristor characteristics enables thermal monitoring and protection.
Feature Summary
- Logic level gate drive capability for direct interface with standard logic circuits
- Integrated TEMPFET® temperature sensor utilizing thyristor characteristics for thermal management
- Drain pin electrically shorted to the metal tab for optimized heat dissipation
Applications
- High-side or low-side load switching in automotive systems
- Power distribution units requiring thermal protection
- Motor control applications involving resistive or inductive loads
Procurement Notes
Verify component authenticity through official Infineon channels or authorized distributors. Confirm that the ordering code matches the specific SMD version requirements. Ensure compliance with RoHS directives if applicable to your manufacturing process. Validate datasheet revisions against the production batch date codes to ensure technical specifications remain consistent.
Selection Notes
Select this component when a 100 V rating and high current handling are required alongside built-in thermal sensing. The logic-level gate threshold simplifies driver circuit design compared to standard MOSFETs. Consider the thermal resistance values and safe operating area curves to ensure reliable operation under expected load conditions and ambient temperatures.
Part Context
This part belongs to the TEMPFET® series, which integrates power switching capabilities with diagnostic functions. Unlike standard discrete MOSFETs, these devices include an embedded temperature sensor to facilitate active thermal protection strategies in demanding electronic environments.
Replacement Considerations
The standard TO-220AB variant is identified by ordering code C67078-S5010-A2. Verify electrical compatibility before substituting other N-channel MOSFETs with similar voltage and current ratings.
