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Product Detailed Parameters
- Description：MOSFET N-CH 55V 33A TO263-5
- Series：TEMPFET®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：18mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id：2V @ 90µA
- Gate Charge (Qg) (Max) @ Vgs：90 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1730 pF @ 25 V
- FET Feature：Temperature Sensing Diode
- Power Dissipation (Max)：120W (Tc)
- Operating Temperature：-40°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TO263-5-2
- Package / Case：TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
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Overview
The BTS247ZE3062AATMA2 is a single-channel N-Channel enhancement mode MOSFET from the Speed TEMPFET family, housed in a PG-TO263-5-2 surface-mount package. It features a drain-source voltage of 55 V and a maximum on-state resistance of 18 mΩ at Tj = 150°C. The device supports a nominal load current of 19 A (ISO 10483) and handles up to 33 A continuous drain current at TC = 100°C. It includes an integrated potential-free temperature sensor with thyristor characteristics for overtemperature protection, operates within a junction temperature range of -40°C to +175°C, and is rated for 1.3 J avalanche energy.
Feature Summary
- Integrates a potential-free temperature sensor with thyristor characteristics for direct overtemperature monitoring and protection
- Supports fast switching operations up to 1 MHz with logic level input compatibility
- Capable of handling high avalanche energy ratings for robust transient performance
Applications
- Automotive low-side power switching applications
- High-speed motor control circuits
- General purpose power switching requiring thermal feedback
Procurement Notes
Verify the specific ordering suffix ATMA2 to confirm the tape-and-reel packaging configuration required for automated assembly processes. Ensure that the component's RoHS compliance status aligns with your manufacturing environmental standards. Cross-reference the datasheet revision history to confirm that the PG-TO263-5-2 package dimensions are consistent with your PCB footprint design requirements.
Selection Notes
Select this component when a low-side switch requires integrated thermal sensing without external circuitry. The 55 V rating suits standard automotive electrical systems. Evaluate the 18 mΩ on-resistance against your conduction loss limits at elevated temperatures. Confirm that the 1.3 J avalanche capability meets the inductive load requirements of your specific application environment.
Part Context
This part belongs to Infineon's Speed TEMPFET family, which combines power MOSFET technology with embedded temperature sensing capabilities. Unlike standard MOSFETs, these devices provide a dedicated analog output related to junction temperature, enabling precise thermal management strategies directly from the semiconductor die.
Replacement Considerations
Check for updated revisions within the BTS247Z series. Verify pinout compatibility if substituting with other PG-TO263-5 packages. Ensure any alternative maintains the same thyristor-based sensor functionality and avalanche energy ratings.
