BTS282Z E3230

Overview

The Infineon Technologies BTS282Z E3230 is a Speed TEMPFET N-Channel enhancement mode MOSFET designed for automotive applications. It features a 49 V drain-source voltage rating and a maximum on-state resistance of 6.5 mΩ at Tj = 150°C. The device supports a nominal load current of 52 A (ISO 10483) and handles up to 80 A continuous drain current at TC = 100°C. It includes an integrated potential-free temperature sensor with thyristor characteristics, providing overtemperature protection with a thermal trip point between 150°C and 170°C. Rated for avalanche energy of 2 J, it operates within a junction temperature range of -40°C to +175°C.

Feature Summary

• Integrated potential-free temperature sensor with thyristor characteristics for direct overtemperature protection
• Avalanche rated capability supporting single pulse energy absorption
• High current pinning functionality to manage load stress
• Logic level input compatibility allowing analog driving capabilities

Applications

• Automotive low-side switching loads
• Temperature sensing circuits requiring isolated feedback
• High-current power distribution systems

Procurement Notes

Verify the specific ordering suffix against the datasheet table to ensure correct lead length and package variant. Confirm that the component meets the required ISO 10483 nominal load current specifications for your application. Check the thermal resistance values relative to your PCB footprint design to ensure adequate heat dissipation. Ensure the gate drive voltage aligns with the logic level input requirements for optimal performance.

Selection Notes

Select this component when high current handling and integrated thermal protection are required in a single package. The P-TO220-7 package facilitates through-hole mounting with a large heatsink tab. Consider the 6.5 mΩ maximum RDS(on) for efficiency calculations at elevated temperatures. The device's fast switching speed up to 1 MHz suits high-frequency control applications.

Part Context

This part belongs to the Speed TEMPFET family from Infineon Technologies. These devices combine power MOSFET technology with integrated temperature sensing elements. The family is specifically engineered for robust automotive environments, offering high reliability and simplified system design by merging power switching and thermal monitoring functions into one component.

Replacement Considerations

Check datasheets for alternative N-Channel MOSFETs with similar 49V ratings and TO-220-7 packages. Verify that any substitute matches the 6.5 mΩ RDS(on) max and 52 A ISO load current. Ensure the replacement also includes an integrated temperature sensor if overtemperature protection is critical to the circuit design.

FAQ

How does the integrated temperature sensor function?

The device includes a potential-free temperature sensor with thyristor characteristics. It triggers when the junction temperature reaches the thermal trip point (150°C to 170°C), providing overtemperature protection.

What is the maximum operating junction temperature?

The maximum operating junction temperature (Tj) is specified as +175°C.

Is the device capable of handling avalanche events?

Yes, the BTS282Z is avalanche rated, supporting a single pulse avalanche energy (EAS) of 2 J under specified conditions.