BUK4D50-30PX

$0.10

Description：BUK4D50-30P/SOT1220/SOT1220
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR)

SKU:be210a09d274 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：BUK4D50-30P/SOT1220/SOT1220
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：28 V
Current - Continuous Drain (Id) @ 25°C：5A (Ta), 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：50mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：21 nC @ 4.5 V
Vgs (Max)：±12V
Input Capacitance (Ciss) (Max) @ Vds：1254 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.1W (Ta), 15W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：DFN2020MD-6
Package / Case：6-UDFN Exposed Pad

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BUK4D50-30PX

Overview

The Nexperia BUK4D50-30PX is a P-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It is housed in a leadless DFN2020MD-6 (SOT1220) plastic package measuring 2 x 2 x 0.65 mm. The device supports an extended junction temperature range up to 175 °C and features side wettable flanks for optical solder inspection. Key electrical parameters include a drain-source voltage of -28 V, a continuous drain current of -13 A at 25 °C, and a maximum on-state resistance of 50 mΩ at VGS = -4.5 V.

Feature Summary

AEC-Q101 qualified for automotive critical applications
Low threshold voltage for efficient gate drive compatibility
Side wettable flanks enable visual inspection of solder joints

Applications

Relay driver circuits
High-speed line drivers
High-side load switching
General purpose switching circuits

Procurement Notes

Verify the specific ordering suffix 'X' against official Nexperia documentation to confirm packaging configuration. Confirm that the component meets the required AEC-Q101 qualification standards for the target application environment. Ensure design inputs align with the specified absolute maximum ratings provided in the datasheet.

Selection Notes

Select this component for designs requiring a compact P-channel solution with high thermal performance. The low on-state resistance minimizes conduction losses in power paths. Verify that the gate drive voltage levels are compatible with the specified threshold characteristics for reliable switching operation.

Part Context

This part belongs to the BUK4D series of medium power Trench MOSFETs from Nexperia. These devices are engineered for high-density circuit designs where small footprint and robust thermal handling are critical. The series utilizes advanced trench technology to achieve superior performance within ultra-thin packages.