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Product Detailed Parameters
- Description：BUK4D60-30/SOT1220/DFN2020MD-6
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：4.2A (Ta), 8.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 8V
- Rds On (Max) @ Id, Vgs：57mOhm @ 4.2A, 8V
- Vgs(th) (Max) @ Id：1.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：5 nC @ 4.5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：296 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2W (Ta), 7.5W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：DFN2020MD-6
- Package / Case：6-UDFN Exposed Pad
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Overview
The BUK4D60-30H is an N-channel enhancement mode Field-Effect Transistor (FET) manufactured by Nexperia. It utilizes TrenchMOS technology and is housed in a DFN2020MD-6 (SOT1220) surface-mounted device plastic package. The component features a drain-source breakdown voltage of 30 V and a continuous drain current rating of 8.3 A at 25°C. Its maximum on-resistance is specified as 60 mΩ, with a gate-source threshold voltage of 1.25 V. The device supports a maximum power dissipation of 7.5 W and operates within a temperature range from -55°C to +175°C.
Feature Summary
- Utilizes TrenchMOS technology for enhanced performance
- Features side wettable flanks for optical solder inspection
- Supports extended operating temperatures up to 175°C
Applications
- Relay driver circuits
- High-speed line drivers
- Low-side load switching
- General switching applications
Procurement Notes
Verify the specific suffix 'H' against official Nexperia documentation to confirm its exact meaning regarding tape-and-reel specifications or marking variations. Ensure the ordered part matches the required DFN2020MD-6 package dimensions and thermal characteristics. Confirm compliance requirements such as RoHS and REACH status directly from the manufacturer's datasheet before finalizing procurement.
Selection Notes
Select this component for designs requiring low on-resistance and high current handling in a compact footprint. The 30V rating suits low-voltage DC systems. The 175°C junction temperature capability allows operation in thermally demanding environments. Verify that the gate drive voltage aligns with the specified threshold and charge parameters for efficient switching control.
Part Context
This part belongs to the BUK4D series of N-channel Trench MOSFETs from Nexperia. These devices are designed for general-purpose switching applications where small size and high efficiency are critical. The DFN2020MD-6 package provides a leadless design suitable for automated surface-mount assembly processes.
Replacement Considerations
Direct substitutes include other Nexperia parts in the same family with identical pinouts and electrical ratings, such as the BUK4D60-30X. Verify package compatibility and thermal performance when considering cross-brand alternatives.
