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Product Detailed Parameters
- Description：SMALL SIGNAL MOSFET FOR AUTOMOTI
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：4.2A (Ta), 8.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 8V
- Rds On (Max) @ Id, Vgs：57mOhm @ 4.2A, 8V
- Vgs(th) (Max) @ Id：1.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：5 nC @ 4.5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：296 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2W (Ta), 7.5W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：DFN2020MD-6
- Package / Case：6-UDFN Exposed Pad
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Overview
The BUK4D60-30X is an N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It operates within a 30 V drain-source voltage range and supports up to 8.3 A continuous drain current at 25 °C. The device features a maximum on-state resistance of 60 mΩ at VGS = 4.5 V. It includes side wettable flanks for optical solder inspection and offers ESD protection exceeding 1 kV HBM. Qualified under AEC-Q101, it functions reliably across an extended temperature range from -55 °C to +175 °C junction temperature.
Feature Summary
- AEC-Q101 qualified for automotive critical applications
- Trench MOSFET technology enabling very fast switching
- Side wettable flanks facilitate optical solder inspection
- Extended thermal capability with junction temperature rating up to 175 °C
Applications
- DC to DC conversion
- High-speed line driver
- Low-side load switch
- Switching circuits
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct package and tape/reel configuration. Confirm that the component meets the required AEC-Q101 qualification standards for your target application environment. Cross-reference the datasheet revision history to ensure you are using the most current product specifications before finalizing design integration.
Selection Notes
Select this component when designing circuits requiring low conduction losses in compact DFN packages. The 30 V rating suits 12 V system architectures. Ensure gate drive voltages align with the specified threshold characteristics for optimal RDSon performance. Consider the thermal resistance values provided for both junction-to-ambient and junction-to-solder-point conditions during PCB layout planning.
Part Context
This part belongs to Nexperia's portfolio of medium power Surface-Mounted Device transistors. It utilizes the DFN2020MD-6 (SOT1220) leadless package designed for thermal efficiency and space-constrained designs. The technology leverages advanced trench structures to minimize on-resistance while maintaining robust switching capabilities suitable for modern power management requirements.
Replacement Considerations
Consult the official Nexperia replacement guide or contact technical support for verified substitute part numbers. Do not assume pin-compatible alternatives without verifying electrical parameters and package dimensions against the original specification sheet.
