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The BUK6208-40C is an N-channel TrenchMOS intermediate level Field-Effect Transistor (FET) designed for high-performance automotive applications. It features a drain-source voltage of 40 V and a continuous drain current of 90 A at 25 °C mounting base temperature. The device operates with a junction temperature range up to 175 °C and supports standard and logic-level gate drive sources. Key electrical parameters include a maximum on-state resistance of 6.2 mΩ at VGS = 10 V and ID = 15 A, and a total power dissipation of 128 W at 25 °C.
Verify the specific ordering suffix matches the required package variant. Confirm that the component meets the necessary AEC-Q101 qualification standards for your target automotive application. Ensure thermal management designs account for the specified junction temperature limits and power dissipation characteristics under actual operating conditions.
Select this component when designing circuits requiring robust N-channel switching with low on-state resistance in automotive environments. Consider the 40 V rating and 90 A current capability relative to load requirements. Evaluate gate drive compatibility to ensure efficient switching performance within the specified voltage ranges.
This part belongs to NXP's TrenchMOS family of N-channel enhancement mode field-effect transistors. These devices utilize advanced trench technology to achieve low on-resistance and high current handling capabilities. The BUK6208-40C is specifically packaged for surface-mount applications, providing a compact solution for power switching needs.
Consult official replacement lists or cross-reference guides provided by NXP Semiconductors for verified substitute part numbers. Do not assume functional equivalence with other manufacturers' components without verifying pinout, electrical specifications, and thermal characteristics against the original datasheet.
The maximum junction temperature is 175 °C.
Yes, the product has been designed and qualified to the AEC-Q101 standard for use in high-performance automotive applications.