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Product Detailed Parameters
- Description：MOSFET N-CH 75V 74A DPAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：75 V
- Current - Continuous Drain (Id) @ 25°C：74A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：11mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：81 nC @ 10 V
- Vgs (Max)：±16V
- Input Capacitance (Ciss) (Max) @ Vds：5251 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：158W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：DPAK
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The BUK6211-75C is a standard and logic level gate drive N-channel enhancement mode Field-Effect Transistor (FET) utilizing advanced TrenchMOS technology in a SOT428 (DPAK) plastic package. Designed for high-performance automotive applications, it meets AEC-Q101 standards with a 175 °C junction temperature rating. Key electrical parameters include a drain-source voltage of 75 V, continuous drain current of 74 A at 25 °C mounting base temperature, and total power dissipation of 158 W. The device exhibits a typical on-state resistance of 11 mΩ at VGS=10V and ID=25A, with a non-repetitive avalanche energy capability of 127 mJ.
Feature Summary
- Compliant with AEC-Q101 automotive qualification standards
- Supports intermediate level gate drive sources
- Rated for thermally demanding environments up to 175 °C
Applications
- 12 V Automotive systems
- Electric and electro-hydraulic power steering
- Engine management
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm package variant and tape/reel specifications. Confirm current product status as active or obsolete via the manufacturer's database before finalizing design-in decisions. Ensure compliance with RoHS directives and check for any recent lifecycle notices regarding end-of-life planning.
Selection Notes
Select this component for designs requiring robust automotive-grade N-channel switching with high current handling capabilities. The DPAK package offers effective thermal dissipation through the mounting base. Consider the 175 °C operating limit for high-temperature environments and verify gate drive compatibility with the specified threshold characteristics for optimal switching performance.
Part Context
This part belongs to Nexperia's BUK series of N-channel TrenchMOS FETs, specifically engineered for automotive reliability. It utilizes TrenchMOS technology to achieve low on-state resistance and efficient power switching. The SOT428 package provides a compact surface-mount solution suitable for space-constrained automotive PCB layouts while maintaining high thermal performance.
Replacement Considerations
Consult official Nexperia substitution guides for verified equivalents. Cross-reference pinouts, thermal resistance values, and electrical limits when considering alternative manufacturers' parts to ensure functional compatibility without compromising automotive safety standards.
