BUK6212-40C,118

$0.34

Description：NEXPERIA BUK6212-40C - 50A, 40V,
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Bulk

SKU:006d77e1581c Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：NEXPERIA BUK6212-40C - 50A, 40V,
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：50A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：11.2mOhm @ 12A, 10V
Vgs(th) (Max) @ Id：2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：33.9 nC @ 10 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：1900 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：80W
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：DPAK
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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BUK6212-40C,118

Overview

The BUK6212-40C,118 is an N-channel TrenchMOS intermediate level FET designed for automotive critical applications. It features a 40V drain-source voltage rating and supports up to 50A continuous drain current at 25°C mounting base temperature. The device exhibits a maximum on-state resistance of 11.2mΩ at VGS=10V and ID=12A. Total power dissipation reaches 80W, with a junction temperature range extending to 175°C. Gate charge is typically 33.9nC at VGS=10V.

Feature Summary

Qualified to AEC-Q101 standards for automotive reliability
Operates in thermally demanding environments with a 175°C junction temperature rating
Compatible with standard and logic level gate drive sources

Applications

12 V Automotive systems
Electric and electro-hydraulic power steering
Motors, lamps and solenoids
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix matches the required package variant. Confirm RoHS compliance status against current regulatory updates. Ensure thermal management design accounts for the specified mounting base temperature limits. Validate that the application voltage does not exceed the absolute maximum ratings defined in the datasheet limiting values section.

Selection Notes

Select this component when designing circuits requiring robust automotive-grade N-channel MOSFETs. The low on-state resistance minimizes conduction losses in high-current paths. The wide operating temperature range ensures stability in harsh engine bay or under-hood environments. Verify gate drive compatibility with the specified threshold voltage characteristics.

Part Context

This part belongs to Nexperia's BUK62 series of N-channel TrenchMOS FETs. These devices utilize advanced trench technology to deliver high current density and low resistance. The DPAK (SOT428) package provides efficient thermal dissipation through the exposed mounting base pad connected to the drain terminal.