ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET N-CH 55V 44A DPAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：44A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：19mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id：2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：33.8 nC @ 10 V
- Vgs (Max)：±16V
- Input Capacitance (Ciss) (Max) @ Vds：1950 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：80W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：DPAK
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Download product information
Overview
The BUK6217-55C,118 is an N-channel TrenchMOS intermediate level FET designed for high-performance automotive applications. It features a DPAK (SOT428) plastic package with a drain current of 44 A and a drain-source voltage rating of 55 V. The device supports junction temperatures up to 175 °C and offers a typical on-state resistance of 19 mΩ at 25 °C. Total power dissipation reaches 80 W at a mounting base temperature of 25 °C.
Feature Summary
- AEC Q101 compliant for automotive reliability
- Compatible with standard and logic level gate drive sources
- Operates in thermally demanding environments up to 175 °C
Applications
- 12 V and 24 V Automotive systems
- Electric and electro-hydraulic power steering
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component when designing circuits requiring robust N-channel switching with intermediate gate drive compatibility. Ensure thermal management strategies accommodate the 175 °C maximum junction temperature and 80 W power dissipation limits under expected operating conditions.
Part Context
This part belongs to Nexperia's TrenchMOS family, utilizing advanced technology for low conduction losses. It is specifically qualified for automotive use, distinguishing it from general-purpose industrial MOSFETs by its adherence to AEC-Q101 standards and suitability for harsh automotive electrical environments.
Replacement Considerations
Consult official Nexperia documentation for verified substitutes. Cross-referencing requires matching key parameters such as 55 V breakdown voltage, 44 A continuous current, and DPAK packaging to ensure functional equivalence in existing designs.
FAQ
What is the maximum non-repetitive drain-source avalanche energy?
The maximum non-repetitive drain-source avalanche energy is 45 mJ under specified test conditions.
Does the device include an internal body diode?
Yes, the datasheet specifies source-drain characteristics including forward voltage and reverse recovery time, confirming the presence of an integrated body diode.
