BUK6226-75C,118

$0.74

Description：MOSFET N-CH 75V 33A DPAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:2a79d59c6c3c Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 75V 33A DPAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：75 V
Current - Continuous Drain (Id) @ 25°C：33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：29mOhm @ 12A, 10V
Vgs(th) (Max) @ Id：2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：34 nC @ 10 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：2000 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：80W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：DPAK
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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BUK6226-75C,118

Overview

The BUK6226-75C is an N-channel TrenchMOS FET in a DPAK (SOT428) package, designed for high-performance automotive applications. It features a drain-source voltage of 75 V and a continuous drain current of 33 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 29 mΩ at VGS = 10 V and ID = 12 A. Total power dissipation reaches 80 W at 25 °C. It supports junction temperatures up to 175 °C and includes avalanche ruggedness with non-repetitive energy ratings of 42 mJ.

Feature Summary

Compliant with AEC Q101 standards for automotive reliability
Operates in thermally demanding environments with a 175 °C junction rating
Compatible with standard and logic level gate drive sources

Applications

12 V and 24 V Automotive systems
Electric and electro-hydraulic power steering
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control

Procurement Notes

Verify the specific ordering suffix matches the required package variant. Confirm that the application environment stays within the specified thermal limits and voltage ratings. Ensure gate drive signals do not exceed the absolute maximum VGS ratings to prevent damage. Check for any recent revision updates to the datasheet before finalizing design specifications.

Selection Notes

Select this component for circuits requiring robust switching capabilities in automotive power management. The low on-state resistance minimizes conduction losses during high-current operation. The DPAK package offers efficient thermal dissipation through the mounting base. Consider the gate charge requirements when designing driver circuits for optimal switching performance.

Part Context

This part belongs to Nexperia's intermediate level gate drive N-channel enhancement mode FET family. It utilizes advanced TrenchMOS technology to achieve high performance in a plastic surface-mounted package. The product line is specifically qualified for automotive use, ensuring durability under varying environmental conditions typical in vehicle electronics.