ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：PFET, 90A I(D), 30V, 0.0075OHM,
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：4.5mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：78 nC @ 10 V
- Vgs (Max)：±16V
- Input Capacitance (Ciss) (Max) @ Vds：4707 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：158W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：DPAK
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
Download product information
Overview
The BUK624R5-30C,118 is an N-channel TrenchMOS standard level FET manufactured by Nexperia USA Inc. It utilizes advanced TrenchMOS technology to provide high-performance switching capabilities in a plastic package. The device is designed and qualified to the AEC-Q101 standard, ensuring reliability for use in high-performance automotive applications. Key electrical characteristics include a drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 24 A at 25°C. The component features low on-state resistance to minimize conduction losses and is suitable for thermally demanding environments with a rating up to 175°C.
Feature Summary
- AEC-Q101 compliant for automotive grade reliability
- Advanced TrenchMOS technology for enhanced performance
- Suitable for standard level gate drive sources
- High avalanche robustness
Applications
- 12V motor loads
- Lamp control systems
- Solenoid actuation
- High performance automotive power systems
- Pulse Width Modulation (PWM) applications
Procurement Notes
Verify the specific suffix
Selection Notes
Select this component for automotive designs requiring robust N-channel switching at 30 V. Ensure the gate drive circuitry supports standard level thresholds. Verify thermal management requirements for operation up to 175°C junction temperature. Confirm that the package type meets the PCB layout constraints for the target application.
Part Context
This part belongs to the BUK624 series of N-channel TrenchMOS FETs from Nexperia. The series is engineered for automotive power applications, offering a balance of low on-resistance and high current handling. The BUK624R5 variant specifically targets 30 V systems, providing a reliable solution for replacing older MOSFET technologies in modern vehicle electronics.
Replacement Considerations
Check for direct pin-compatible substitutes within the Nexperia BUK624 series or equivalent automotive-grade 30 V N-channel MOSFETs from other manufacturers. Ensure replacement parts meet AEC-Q101 qualification and match the thermal and electrical specifications.
