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The BUK625R0-40C,118 is an N-channel TrenchMOS intermediate level FET designed for high-performance automotive applications. It features a drain-source voltage of 40 V and a continuous drain current of 90 A at 25 °C mounting base temperature. The device supports a total power dissipation of 158 W and operates within a junction temperature range of -55 °C to 175 °C. It exhibits a maximum on-state resistance of 4.15 mΩ at 25 A and 10 V gate drive. The component includes avalanche ruggedness with a non-repetitive energy rating of 200 mJ.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct package and tape/reel specifications. Confirm that the requested part number matches the exact electrical characteristics required for the target application. Cross-reference the revision history to ensure the latest datasheet version is used for design validation. Ensure compliance with RoHS and REACH regulations as stated in the product profile.
Select this component for designs requiring robust N-channel MOSFET performance in automotive environments. The 40V rating and 90A current capability suit low-voltage high-current switching tasks. Consider the 175°C junction temperature rating for thermal management in confined spaces. Verify gate drive compatibility with standard or logic level drivers due to the intermediate level specification.
This device belongs to Nexperia's TrenchMOS family, utilizing advanced trench technology for enhanced performance. It is housed in a DPAK (SOT428) plastic surface-mounted package. The product is specifically qualified for automotive use under the AEC-Q101 standard, ensuring durability in harsh operating conditions typical of modern vehicle electronics.
BUK625R0-40C