BUK652R6-40C,127

$1.08

Description：MOSFET N-CH 40V 120A TO220AB
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tube

SKU:3899c63666a3 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 120A TO220AB
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：2.7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：199 nC @ 10 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：11.334 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：263W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：-
Qualification：-
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

Download product information

BUK652R6-40C,127

Overview

The BUK652R6-40C is an N-channel TrenchMOS intermediate level gate drive Field-Effect Transistor (FET) manufactured by Nexperia. It utilizes advanced TrenchMOS technology and is designed for high-performance automotive applications, meeting the AEC Q101 standard. The device features a drain-source voltage rating of 40 V and a continuous drain current capacity of 120 A at a mounting base temperature of 25 °C. Total power dissipation reaches 263 W under the same thermal conditions. The on-state resistance is specified as 2.7 mΩ at VGS = 10 V and ID = 25 A. It operates within a junction temperature range of -55 °C to 175 °C.

Feature Summary

Compliant with AEC Q101 standards for automotive reliability
Capable of operation in thermally demanding environments up to 175 °C
Compatible with standard and logic level gate drive sources

Applications

12 V and 24 V Automotive systems
Electric and electro-hydraulic power steering
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control

Procurement Notes

Verify component authenticity through authorized Nexperia distributors or official channels. Confirm that the received part matches the specific ordering code BUK652R6-40C,127. Ensure compliance with RoHS directives and check for any relevant REACH substance declarations prior to integration into final assemblies.

Selection Notes

Select this component for designs requiring robust N-channel switching with low on-state resistance. Consider the TO-220AB package for effective heat dissipation in high-current scenarios. Evaluate thermal management requirements against the specified junction-to-mounting base thermal resistance when designing for peak load conditions.

Part Context

This device belongs to the Nexperia TrenchMOS family of N-channel enhancement mode FETs. It represents an evolution from previous NXP Standard Product lines, maintaining technical continuity while adhering to updated corporate branding and qualification standards for modern automotive electronics manufacturing.