BUK653R3-30C,127

Description：MOSFET N-CH 30V 100A TO220AB
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tube

SKU:2fe1912c84b3 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 30V 100A TO220AB
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：3.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：114 nC @ 10 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：6960 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：204W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

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BUK653R3-30C,127

Overview

The BUK653R3-30C is an N-channel TrenchMOS intermediate level FET designed for high-performance automotive applications. It features a drain-source voltage of 30 V and a continuous drain current of 100 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 3.3 mΩ at VGS = 10 V and ID = 25 A. Total power dissipation reaches 204 W at 25 °C, with a junction temperature rating up to 175 °C. Thermal resistance from junction to mounting base is typically 0.74 K/W.

Feature Summary

AEC Q101 compliant for automotive reliability
Advanced TrenchMOS technology for low conduction losses
Compatible with standard and logic level gate drive sources
Rated for thermally demanding environments up to 175 °C

Applications

12 V Automotive systems
Electric and electro-hydraulic power steering
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control

Procurement Notes

Verify the specific ordering suffix matches the required package variant. Confirm RoHS compliance status against current regulatory updates. Check for any recent Product Change Notifications (PCN) regarding assembly sites or material changes. Ensure the supplier provides valid traceability documentation for automotive-grade components.

Selection Notes

Select this component when high current switching in automotive environments is required. The TO-220AB package facilitates heatsink mounting for thermal management. Verify that the application's gate drive voltage aligns with the specified RDSon conditions. Consider the avalanche energy rating for inductive load protection requirements.

Part Context

This part belongs to Nexperia's N-channel TrenchMOS family, utilizing advanced trench gate technology. It is manufactured by NXP Semiconductors, now operating under the Nexperia brand. The product is qualified to AEC-Q101 standards, ensuring suitability for rigorous automotive electronic environments.