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Product Detailed Parameters
- Description：PFET, 120A I(D), 55V, 0.0055OHM,
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：3.9mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：191 nC @ 10 V
- Vgs (Max)：±16V
- Input Capacitance (Ciss) (Max) @ Vds：11.516 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：263W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：TO-220AB
- Package / Case：TO-220-3
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Overview
The BUK653R5-55C,127 is an N-channel TrenchMOS intermediate level FET manufactured by Nexperia. It utilizes advanced TrenchMOS technology in a plastic package and is designed as an enhancement mode Field-Effect Transistor. The component is qualified to the AEC-Q101 standard for high-performance automotive applications. Key electrical characteristics include a drain-source voltage of 55 V and a continuous drain current of 3.5 A. It features low on-resistance suitable for efficient power switching.
Feature Summary
- AEC-Q101 compliant for automotive reliability
- Suitable for standard and logic level gate drive sources
- Designed for thermally demanding environments with a 175 °C rating
Applications
- 12 V and 24 V Automotive systems
- Electric and electro-hydraulic power steering
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
Procurement Notes
Verify the specific suffix '127' against official Nexperia documentation to confirm tape and reel specifications. Ensure the component meets AEC-Q101 requirements for your target automotive application. Cross-reference the datasheet for thermal resistance values relevant to your PCB layout. Confirm RoHS compliance status through the manufacturer's latest release notes.
Selection Notes
Select this component for applications requiring robust N-channel switching in automotive environments. The intermediate level gate drive compatibility simplifies driver circuit design. Consider the 175 °C operating temperature capability for high thermal stress scenarios. Evaluate the trade-off between conduction losses and gate charge for your specific switching frequency requirements.
Part Context
This part belongs to Nexperia's BUK series of N-channel TrenchMOS FETs. These devices are engineered for high efficiency and reliability in power management circuits. The series is widely used in industrial and automotive sectors where durability under harsh conditions is critical. The TrenchMOS technology provides improved performance over traditional MOSFET designs.
Replacement Considerations
Direct substitutes may include other Nexperia BUK series parts with similar voltage and current ratings. Verify pinout compatibility and thermal characteristics before substitution. Check for equivalent AEC-Q101 qualification if automotive use is required.
