BUK654R8-40C,127

$0.78

Description：MOSFET N-CH 40V 100A TO220AB
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tube

SKU:693b00dd16e5 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 100A TO220AB
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：4.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：88 nC @ 10 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：5.2 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：158W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Through Hole
Supplier Device Package：TO-220AB
Package / Case：TO-220-3

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BUK654R8-40C,127

Overview

The BUK654R8-40C,127 is an N-channel TrenchMOS intermediate level FET designed for high-performance automotive applications. It operates with a drain-source voltage of 40 V and supports a continuous drain current of 100 A at a mounting base temperature of 25 °C. The device features a maximum on-state resistance of 4.8 mΩ at VGS = 10 V and ID = 25 A. Total power dissipation reaches 158 W under standard thermal conditions. The component is qualified to the AEC-Q101 standard and withstands junction temperatures up to 175 °C.

Feature Summary

AEC Q101 compliant for automotive reliability
Suitable for standard and logic level gate drive sources
Operates in thermally demanding environments up to 175 °C

Applications

12 V Automotive systems
Electric and electro-hydraulic power steering
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component for designs requiring robust N-channel switching with intermediate gate drive compatibility. Ensure thermal management strategies account for the TO-220AB package's thermal resistance characteristics. Validate that the application's peak current demands remain within the specified safe operating area limits defined in the datasheet figures.

Part Context

This part belongs to Nexperia's TrenchMOS family, utilizing advanced trench technology for low on-resistance and high efficiency. It is manufactured by Nexperia USA Inc., formerly part of NXP Semiconductors' standard product business. The device is housed in a TO-220AB plastic single-ended package with a heatsink mount.

Replacement Considerations

Consult official Nexperia documentation for verified substitutes. Cross-reference pinout configurations and electrical parameters such as RDS(on) and VDS before implementation.