BUK6607-75C,118

$1.21

Description：MOSFET N-CH 75V 100A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:c4adcfc5dca0 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 75V 100A D2PAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：75 V
Current - Continuous Drain (Id) @ 25°C：100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：123 nC @ 10 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：7600 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：204W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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BUK6607-75C,118

Overview

The BUK6607-75C,118 is an N-channel TrenchMOS FET designed for high-performance automotive applications. It features a 75 V drain-source voltage rating and supports a continuous drain current of 100 A at a mounting base temperature of 25 °C. The device offers a typical on-state resistance (RDSon) of 67 mΩ at VGS = 10 V and ID = 25 A. Total power dissipation reaches 204 W at 25 °C mounting base temperature. It operates within a junction temperature range of -55 °C to +175 °C and includes avalanche ruggedness with a non-repetitive energy rating of 191 mJ.

Feature Summary

Compliant with the AEC Q101 standard for automotive reliability.
Utilizes advanced TrenchMOS technology for enhanced performance.
Suitable for intermediate level gate drive sources.
Designed for thermally demanding environments with a 175 °C rating.

Applications

12 V and 24 V Automotive systems
Electric and electro-hydraulic power steering
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component when designing circuits requiring robust N-channel switching in automotive environments. Ensure the gate drive source matches the intermediate level requirements specified in the datasheet. Consider the thermal management capabilities provided by the D2PAK package and the 175 °C junction temperature rating for high-power density designs.

Part Context

This part belongs to Nexperia's portfolio of N-channel TrenchMOS FETs. It is specifically engineered for automotive use, adhering to AEC-Q101 standards. The device utilizes plastic packaging to provide a cost-effective yet durable solution for power switching applications in vehicles.