BUK6610-75C,118

$0.46

Description：NEXPERIA BUK6610 - N-CHANNEL TRE
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Bulk

SKU:59629911eb17 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：NEXPERIA BUK6610 - N-CHANNEL TRE
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：75 V
Current - Continuous Drain (Id) @ 25°C：78A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：10mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：81 nC @ 10 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：5251 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：158W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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BUK6610-75C,118

Overview

The Nexperia BUK6610-75C,118 is an N-channel TrenchMOS FET designed for intermediate level gate drive sources. It utilizes advanced TrenchMOS technology and is qualified to the AEC-Q101 standard for high-performance automotive applications. The device operates with a drain-source voltage of 75 V and supports a continuous drain current of 78 A at a mounting base temperature of 25 °C. It features a low on-state resistance of 10 mΩ at 25 °C and total power dissipation of 158 W. The component handles a peak drain current of 311 A and withstands junction temperatures up to 175 °C.

Feature Summary

Qualified to AEC-Q101 standard for automotive use
Advanced TrenchMOS technology for enhanced performance
Suitable for thermally demanding environments with 175 °C rating

Applications

12 V Automotive systems
Electric and electro-hydraulic power steering
Engine management, motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power switching

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component when designing circuits requiring robust N-channel MOSFETs for automotive power switching. Ensure the application demands a 75 V rating and can accommodate the D2PAK package thermal characteristics. Verify that the gate drive source aligns with the intermediate level requirements specified in the datasheet.

Part Context

This part belongs to the BUK66 series of N-channel TrenchMOS FETs from Nexperia. These devices are engineered for high-current applications, leveraging TrenchMOS technology to minimize on-state resistance and improve switching efficiency. The series is widely used in automotive electronics where reliability under thermal stress is critical.

Replacement Considerations

Check for direct substitutes within the BUK66 series or other Nexperia N-channel MOSFETs with matching 75 V ratings and similar current capabilities. Ensure any replacement maintains compatibility with the D2PAK (SOT404) package footprint and thermal resistance requirements.