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Product Detailed Parameters
- Description：N-CHANNEL POWER MOSFET
- Series：TrenchMOS™
- Mfr：NXP USA Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：1.6mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：229 nC @ 10 V
- Vgs (Max)：±16V
- Input Capacitance (Ciss) (Max) @ Vds：14964 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：306W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The BUK661R6-30C is an N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology, designed for intermediate level gate drive applications. It features a drain-source voltage of 30 V and a continuous drain current of 120 A at 25 °C mounting base temperature. The device supports a total power dissipation of 306 W and operates with a junction temperature up to 175 °C. Its on-state resistance is typically 1.6 mΩ at 25 °C. The component is qualified to the AEC Q101 standard for automotive use.
Feature Summary
- Qualified to AEC Q101 standards for high performance automotive applications
- Utilizes advanced TrenchMOS technology for enhanced switching performance
- Rated for thermally demanding environments with a 175 °C junction temperature capability
Applications
- 12 V Automotive systems
- Electric and electro-hydraulic power steering
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to ensure correct package and reel specifications. Confirm that the component meets the required AEC Q101 qualification status for your target automotive application. Review the latest datasheet revision to ensure all electrical parameters align with your design constraints before finalizing procurement.
Selection Notes
Select this component for circuits requiring robust intermediate level gate drive capabilities in automotive environments. Ensure the thermal management design accommodates the specified power dissipation limits at the expected mounting base temperatures. Verify that the gate drive voltage levels are sufficient to achieve the desired low on-state resistance characteristics during operation.
Part Context
This part belongs to the Nexperia BUK6 series of N-channel TrenchMOS FETs. These components are engineered specifically for automotive-grade reliability and performance. The series utilizes proprietary trench technology to deliver high current handling and low conduction losses, making them suitable for demanding power switching tasks in vehicle electrical architectures.
Replacement Considerations
Consult official Nexperia substitution guides or contact technical support for verified alternative part numbers. Do not assume pin-compatible replacements without verifying electrical parameters and thermal characteristics against the original specification.
FAQ
What is the maximum non-repetitive drain-source avalanche energy rating?
The non-repetitive drain-source avalanche energy (EDS(AL)S) is rated at 1.707 J under conditions of ID = 100 A, Vsup ≤ 30 V, RGS = 50 Ω, VGS = 10 V, and initial junction temperature of 25 °C.
How does the gate-source threshold voltage vary with temperature?
The gate-source threshold voltage decreases as the junction temperature increases. At -55 °C, the typical value is approximately 3.3 V, while at 175 °C, it drops to approximately 0.8 V.
