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Product Detailed Parameters
- Description：MOSFET N-CH 30V 120A D2PAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：1.6mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：229 nC @ 10 V
- Vgs (Max)：±16V
- Input Capacitance (Ciss) (Max) @ Vds：14964 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：306W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The Nexperia BUK661R6-30C,118 is an N-channel TrenchMOS intermediate level FET designed for high-performance automotive applications. It operates with a drain-source voltage of 30 V and supports a continuous drain current of 120 A at a mounting base temperature of 25 °C. The device features a low on-state resistance of 1.4 mΩ to 1.6 mΩ at VGS = 10 V and ID = 25 A. Total power dissipation reaches 306 W under standard conditions. It includes avalanche ruggedness with non-repetitive energy handling up to 1.707 J. The component is housed in a D2PAK (SOT404) plastic package.
Feature Summary
- Compliant with the AEC Q101 standard for automotive reliability
- Optimized for intermediate level gate drive sources
- Rated for thermally demanding environments with a 175 °C junction temperature limit
Applications
- 12 V Automotive systems
- Electric and electro-hydraulic power steering
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component when designing circuits requiring robust N-channel switching with intermediate gate drive compatibility. Ensure thermal management strategies account for the 306 W total power dissipation capability and the 0.49 K/W thermal resistance from junction to mounting base. Verify that the application voltage does not exceed the 30 V drain-source rating and that gate drive signals remain within the specified limits to maintain performance and longevity.
Part Context
This part belongs to Nexperia's TrenchMOS family, utilizing advanced trench technology to achieve low on-state resistance and high efficiency. The BUK661R6-30C is specifically qualified for automotive use, meeting AEC-Q101 standards. It serves as a high-current switching solution in power electronics, offering improved thermal performance compared to standard MOSFETs through its D2PAK package design.
Replacement Considerations
Check datasheets for alternative N-channel MOSFETs with similar 30 V ratings and comparable RDS(on) values. Ensure any substitute matches the SOT404 (D2PAK) package dimensions and pinout configuration. Verify that replacement parts also meet AEC-Q101 requirements if used in automotive contexts.
