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Product Detailed Parameters
- Description：NEXPERIA BUK662R5-30C - 100A, 30
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：2.8mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：114 nC @ 10 V
- Vgs (Max)：±16V
- Input Capacitance (Ciss) (Max) @ Vds：6960 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：204W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The Nexperia BUK662R5-30C is an N-channel enhancement mode Field-Effect Transistor utilizing advanced TrenchMOS technology. It features a 30 V drain-source voltage rating and supports a continuous drain current of 100 A at a mounting base temperature of 25 °C. The device exhibits a maximum on-state resistance of 2.8 mΩ at VGS = 10 V and ID = 25 A, with a total power dissipation capacity of 204 W. Designed for thermally demanding environments, it operates up to a junction temperature of 175 °C and meets AEC-Q101 standards for automotive applications.
Feature Summary
- AEC-Q101 qualified for high-performance automotive applications
- Suitable for intermediate level gate drive sources
- Rated for operation in thermally demanding environments up to 175 °C
Applications
- 12 V Automotive systems
- Electric and electro-hydraulic power steering
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
Procurement Notes
Verify the specific ordering suffix against the manufacturer's latest documentation to ensure correct package and tape/reel specifications. Confirm that the component status remains active for production before finalizing design-in decisions. Cross-reference thermal management requirements with the provided power dissipation curves to ensure adequate heat sinking for the intended operating conditions.
Selection Notes
Select this component for designs requiring robust N-channel switching with intermediate gate drive compatibility. The low on-state resistance minimizes conduction losses in high-current paths. Ensure the application circuit accounts for the specified avalanche energy limits and peak drain current ratings during transient events. Verify that the D2PAK package thermal characteristics align with the system's cooling capabilities.
Part Context
This part belongs to Nexperia's TrenchMOS family of N-channel enhancement mode FETs. These devices are engineered using advanced trench gate technology to deliver high efficiency and low switching losses. The series is specifically designed to meet the rigorous reliability and performance standards required for modern automotive electronics and industrial power switching applications.
Replacement Considerations
Consult official Nexperia substitution guides for verified equivalents. Do not assume pinout or electrical compatibility with other D2PAK packages without explicit datasheet confirmation.
