BUK663R2-40C,118

$0.56

Description：NEXPERIA BUK663R2-40C - 100A, 40
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Bulk

SKU:08ec54fd958b Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：NEXPERIA BUK663R2-40C - 100A, 40
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：3.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：125 nC @ 10 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：8020 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：204W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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BUK663R2-40C,118

Overview

The BUK663R2-40C is an N-channel TrenchMOS intermediate level FET designed for high-performance automotive applications. It features a drain-source voltage of 40 V and a continuous drain current of 100 A at 25 °C mounting base temperature. The device dissipates up to 204 W with a maximum on-state resistance of 3.2 mΩ at VGS = 10 V. It supports junction temperatures up to 175 °C and includes avalanche ruggedness rated at 368 mJ.

Feature Summary

Qualified to AEC-Q101 standard for automotive use
Operates in thermally demanding environments with a 175 °C rating
Compatible with intermediate level gate drive sources

Applications

12 V Automotive systems
Electric and electro-hydraulic power steering
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control

Procurement Notes

Verify the specific ordering suffix matches the required package variant. Confirm that the application environment stays within the specified thermal limits and voltage ratings. Ensure gate drive signals align with the intermediate level requirements defined in the datasheet. Check for any recent product change notices regarding manufacturing locations or labeling updates.

Selection Notes

Select this component when an N-channel MOSFET with 40 V capability and high current handling is required. The 175 °C junction temperature rating makes it suitable for harsh automotive thermal conditions. Verify that the gate drive circuitry provides sufficient voltage to achieve the low on-state resistance specifications listed in the static characteristics table.

Part Context

This part belongs to Nexperia's TrenchMOS family of N-channel enhancement mode field-effect transistors. It utilizes advanced trench technology to deliver low on-state resistance within a robust D2PAK plastic package. The device is specifically engineered to meet the rigorous reliability standards required for modern automotive electronic systems.