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Product Detailed Parameters
- Description：MOSFET N-CH 75V 120A D2PAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：75 V
- Current - Continuous Drain (Id) @ 25°C：120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：4mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：234 nC @ 10 V
- Vgs (Max)：±16V
- Input Capacitance (Ciss) (Max) @ Vds：15450 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：306W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Overview
The BUK663R7-75C is an N-channel TrenchMOS FET designed for high-performance automotive applications. It features a drain-source voltage of 75 V and a continuous drain current of 120 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 3.4 mΩ at VGS = 10 V and ID = 25 A. Total power dissipation reaches 306 W under specified conditions. It supports junction temperatures up to 175 °C and includes avalanche ruggedness with non-repetitive energy handling of 523 mJ.
Feature Summary
- Compliant with AEC-Q101 standards for automotive reliability
- Utilizes advanced TrenchMOS technology for low conduction losses
- Rated for operation in thermally demanding environments up to 175 °C
Applications
- 12 V Automotive systems
- Electric and electro-hydraulic power steering
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm package variant and tape/reel specifications. Confirm RoHS compliance status and REACH SVHC declarations prior to integration. Ensure design margins account for the package-limited continuous current ratings relative to actual mounting base temperatures during operation.
Selection Notes
Select this component for circuits requiring intermediate level gate drive compatibility and robust thermal performance. The D2PAK (SOT404) package provides efficient heat dissipation for high-current switching tasks. Evaluate the 75 V breakdown voltage against system transients and ensure gate drive voltages align with the specified threshold characteristics for optimal RDSon performance.
Part Context
This part belongs to the BUK663 series of N-channel TrenchMOS FETs manufactured by Nexperia. These devices are engineered specifically for automotive-grade reliability and high-efficiency power switching. The series utilizes silicon planar trench technology to achieve low on-resistance and high current density within a surface-mount plastic package suitable for automated assembly processes.
Replacement Considerations
Consult official Nexperia substitution guides for verified equivalents. Cross-reference pinout configurations and thermal resistance values when considering alternative packages.
