BUK664R6-40C,118

$0.46

Description：PFET, 80A I(D), 40V, 0.0046OHM,
Series：*
Mfr：Nexperia USA Inc.
Package：Bulk

SKU:e283885769bf Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：PFET, 80A I(D), 40V, 0.0046OHM,
Series：*
Mfr：Nexperia USA Inc.
Package：Bulk
FET Type：-
Technology：-
Drain to Source Voltage (Vdss)：-
Current - Continuous Drain (Id) @ 25°C：-
Drive Voltage (Max Rds On, Min Rds On)：-
Rds On (Max) @ Id, Vgs：-
Vgs(th) (Max) @ Id：-
Gate Charge (Qg) (Max) @ Vgs：-
Vgs (Max)：-
Input Capacitance (Ciss) (Max) @ Vds：-
FET Feature：-
Power Dissipation (Max)：-
Operating Temperature：-
Grade：-
Qualification：-
Mounting Type：-
Supplier Device Package：-
Package / Case：-

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BUK664R6-40C,118

Overview

The BUK664R6-40C is an N-channel TrenchMOS intermediate level FET designed for high-performance automotive applications. It features a drain-source voltage of 40 V and a continuous drain current of 80 A at 25 °C mounting base temperature. The device supports a total power dissipation of 158 W and exhibits a maximum on-state resistance of 4.6 mΩ at 25 A and 10 V gate drive. It includes a source-drain diode with a reverse recovery time of 42 ns and operates within a junction temperature range of -55 °C to 175 °C.

Feature Summary

Compliant with AEC-Q101 standards for automotive reliability
Utilizes advanced TrenchMOS technology for enhanced performance
Rated for thermally demanding environments up to 175 °C

Applications

12 V Automotive systems
Electric and electro-hydraulic power steering
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control

Procurement Notes

Verify the specific ordering suffix against manufacturer documentation to confirm package type and tape/reel specifications. Ensure design compliance with absolute maximum ratings, particularly regarding avalanche energy limits and thermal resistance constraints during operation. Confirm that the selected component meets all relevant automotive qualification standards required for the intended application environment.

Selection Notes

Select this component for applications requiring robust switching capabilities in 12 V automotive architectures. Consider the low on-state resistance for minimizing conduction losses in high-current scenarios. Evaluate thermal management requirements based on the specified junction-to-mounting base thermal resistance and ensure the PCB layout supports adequate heat dissipation for sustained operation at elevated temperatures.

Part Context

This part belongs to the Nexperia BUK66 series of N-channel TrenchMOS FETs. These devices are engineered for intermediate-level gate drive sources and offer improved ruggedness compared to standard MOSFETs. The series is widely utilized in power switching applications where high efficiency and thermal stability are critical for system longevity and performance.