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Product Detailed Parameters
- Description：MOSFET N-CH 55V 228A D2PAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：228A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：2.3mOhm @ 90A, 10V
- Vgs(th) (Max) @ Id：2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：253 nC @ 10 V
- Vgs (Max)：±16V
- Input Capacitance (Ciss) (Max) @ Vds：16000 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：300W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：D2PAK-7
- Package / Case：TO-263-7, D2PAK (6 Leads + Tab)
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Overview
The BUK6C2R1-55C,118 is an N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology. It features a drain-source voltage of 55 V and a continuous drain current of 228 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 2.3 mΩ at 25 °C and supports a total power dissipation of 300 W. It operates within a junction temperature range of -55 °C to 175 °C and includes an integrated source-drain diode with a reverse recovery time of 56 ns.
Feature Summary
- Compliant with AEC-Q101 automotive standards for high-performance applications
- Capable of handling high currents up to 320 A peak
- Optimized for low conduction losses through minimal on-state resistance
- Compatible with standard and logic level gate drive sources
Applications
- 12 V automotive systems
- Electric and electro-hydraulic power steering
- Start-Stop micro-hybrid applications
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix matches the required package variant. Confirm that the component status remains active for new designs before finalizing procurement plans. Ensure all environmental compliance requirements align with project specifications. Cross-reference the latest datasheet revision to validate electrical parameters against current production batches.
Selection Notes
Select this component for circuits requiring robust N-channel switching with high current capacity. Evaluate thermal management strategies to maintain junction temperatures within the specified 175 °C limit. Consider gate drive compatibility to ensure optimal switching speeds and minimize dynamic losses during operation.
Part Context
This part belongs to Nexperia's intermediate level FET portfolio designed for automotive environments. It employs TrenchMOS technology to achieve superior performance characteristics compared to conventional MOSFETs. The SOT427 (D2PAK) package provides efficient heat dissipation capabilities essential for high-power density applications.
Replacement Considerations
Consult official Nexperia documentation for verified substitute part numbers. Do not assume functional equivalence based solely on package similarity or generic parameter ranges.
