BUK6C3R3-75C,118

$1.18

Description：NEXPERIA BUK6C3R3 - N-CHANNEL TR
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Bulk

SKU:c9ce6e518d5a Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：NEXPERIA BUK6C3R3 - N-CHANNEL TR
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：75 V
Current - Continuous Drain (Id) @ 25°C：181A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：3.4mOhm @ 90A, 10V
Vgs(th) (Max) @ Id：2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：253 nC @ 10 V
Vgs (Max)：±16V
Input Capacitance (Ciss) (Max) @ Vds：15800 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：300W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK-7
Package / Case：TO-263-7, D2PAK (6 Leads + Tab)

Download product information

BUK6C3R3-75C,118

Overview

The BUK6C3R3-75C,118 is an N-channel TrenchMOS intermediate level FET designed for high-performance automotive applications. It utilizes advanced TrenchMOS technology in a D2PAK (SOT427) plastic package. The device features a drain-source voltage rating of 75 V and supports continuous drain currents up to 181 A at a mounting base temperature of 25 °C. Total power dissipation reaches 300 W under the same conditions. The component exhibits low on-state resistance, typically 3.4 mΩ at VGS = 10 V and ID = 90 A, ensuring minimal conduction losses. It operates within a junction temperature range of -55 °C to 175 °C.

Feature Summary

AEC Q101 compliant for automotive reliability
High current handling capability up to 320 A peak
Low conduction losses due to very low on-state resistance
Suitable for standard and logic level gate drive sources

Applications

12 V and 24 V automotive systems
Electric and electro-hydraulic power steering
Motors, lamps and solenoids
Start-Stop micro-hybrid applications
Transmission control

Procurement Notes

Verify the specific ordering suffix matches the required packaging configuration. Confirm that the component status remains active for new designs. Check for any recent Product Change Notices regarding assembly sites or labeling updates. Ensure compatibility with existing thermal management solutions given the high current ratings. Validate RoHS compliance status against current regulatory requirements.

Selection Notes

Select this component for applications requiring robust power switching in thermally demanding environments. The 175 °C junction temperature rating provides resilience against heat stress. Consider the intermediate level gate drive suitability when designing driver circuits. Evaluate the package's thermal resistance characteristics for effective heat dissipation strategies in compact automotive layouts.

Part Context

This part belongs to Nexperia's TrenchMOS family, optimized for efficiency and ruggedness. It is specifically qualified to AEC-Q101 standards, distinguishing it from general-purpose industrial MOSFETs. The D2PAK package offers a balance between high current capacity and surface-mount convenience, making it suitable for direct board mounting in automotive power modules.