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Product Detailed Parameters
- Description：MOSFET N-CH 60V 2.1A/5.7A 6DFN
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：2.1A (Ta), 5.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：210mOhm @ 2.1A, 10V
- Vgs(th) (Max) @ Id：2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：3.8 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：110 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：2W (Ta), 15W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：DFN2020MD-6
- Package / Case：6-UDFN Exposed Pad
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Overview
The BUK6D210-60EX is an N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It is housed in a DFN2020MD-6 (SOT1220) plastic package with side-wettable flanks. The device supports a drain-source voltage of 60 V and a continuous drain current of 5.7 A at 25 °C case temperature. Key electrical parameters include a maximum on-state resistance of 210 mΩ at VGS = 10 V, a gate-source voltage limit of ±20 V, and a total power dissipation of 15 W. It operates within a junction temperature range of -55 °C to +175 °C.
Feature Summary
- AEC-Q101 qualified for automotive applications
- Extended operating temperature range up to 175 °C
- Side wettable flanks enable optical solder inspection
- ESD protection exceeding 2 kV HBM
Applications
- LED lighting
- High-speed line driver
- Low-side load switch
- Switching circuits
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as reel or cut tape specifications. Confirm that the component meets all required environmental standards and RoHS compliance levels before finalizing procurement orders.
Selection Notes
Select this component when a compact surface-mount solution with high thermal performance is required. The low on-state resistance and small footprint make it suitable for space-constrained designs. Ensure the application voltage and current ratings remain within the specified absolute maximum limits.
Part Context
This part belongs to Nexperia's medium-power MOSFET portfolio designed for efficient switching. The DFN2020MD-6 package provides enhanced thermal dissipation compared to standard packages. It is engineered for reliability in demanding environments, including automotive systems requiring robust ESD protection.
Replacement Considerations
Direct replacements must match the 60 V rating, N-channel configuration, and DFN2020MD-6 package. Verify that alternative components meet the same RDS(on) and thermal resistance specifications to ensure circuit compatibility.
