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Product Detailed Parameters
- Description：MOSFET N-CH 30V 7.2A/22A 6DFN
- Series：-
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：7.2A (Ta), 22A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：22mOhm @ 7.2A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：440 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2W (Ta), 19W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：DFN2020MD-6
- Package / Case：6-UDFN Exposed Pad
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Overview
The Nexperia BUK6D22-30EX is an N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It is housed in a DFN2020MD-6 (SOT1220) leadless plastic package with dimensions of 2 mm x 2 mm x 0.65 mm. The device supports a drain-source voltage of 30 V and a continuous drain current of 22 A at 25 °C case temperature. Key electrical parameters include a maximum on-state resistance of 22 mΩ at VGS = 10 V, a total gate charge of 14 nC, and a power dissipation rating of 19 W. It operates within a junction temperature range of -55 °C to +175 °C.
Feature Summary
- AEC-Q101 qualified for automotive reliability standards
- Extended operating junction temperature up to 175 °C
- Side wettable flanks enable optical solder joint inspection
- ESD protection exceeding 2 kV HBM
Applications
- Relay driver circuits
- High-speed line drivers
- Low-side load switching
- General purpose switching applications
Procurement Notes
Verify the specific ordering suffix 'EX' against the manufacturer's official documentation to confirm packaging details such as reel specifications or tape-and-reel quantities. Ensure the component matches the DFN2020MD-6 footprint requirements and that the marking code corresponds to the correct revision level before finalizing procurement orders.
Selection Notes
Select this component when a compact surface-mount solution is required for low-voltage switching tasks. The DFN2020MD-6 package offers thermal efficiency suitable for space-constrained designs. Verify that the application logic levels align with the specified gate threshold voltage and that the peak current demands remain within the single-pulse limits defined in the absolute maximum ratings.
Part Context
This part belongs to the Nexperia BUK6D series of medium-power N-channel Trench MOSFETs. These devices are engineered for high-efficiency performance in automotive and industrial environments. The series utilizes advanced trench technology to minimize conduction losses while maintaining robust avalanche ruggedness and electrostatic discharge tolerance across the product family.
Replacement Considerations
Direct substitutes within the same series include BUK6D16-30E and BUK6D23-40E. When replacing, verify that the replacement part maintains compatibility with the existing PCB footprint and meets or exceeds the original drain-source voltage and current requirements.
