SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Nexperia BUK6D23-40EX is an N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It is housed in a DFN2020MD-6 (SOT1220) surface-mount package measuring 2 x 2 x 0.65 mm. The device supports a drain-source voltage of 40 V and a continuous drain current of 19 A at 25 °C. Key electrical parameters include a maximum on-state resistance of 23 mΩ, a gate-source threshold voltage of 1.3 V to 2.7 V, and a total power dissipation of 15 W. It operates within a junction temperature range of -55 °C to +175 °C.
Verify the specific suffix 'EX' against the official Nexperia ordering information to confirm packaging details such as reel specifications or tape-and-reel dimensions. Ensure the component matches the DFN2020MD-6 package outline and that the marking code corresponds to the correct type number before finalizing procurement orders.
Select this component when a compact SMD solution with high current handling is required. The 40 V rating and 19 A capacity suit low-voltage power management tasks. Verify that the PCB footprint accommodates the 2 x 2 mm body size and that thermal design accounts for the specified thermal resistance values under expected operating conditions.
This part belongs to the Nexperia BUK6D series of N-channel Trench MOSFETs. These devices are engineered for medium-power applications requiring small footprints. The DFN2020MD-6 package offers enhanced thermal performance compared to standard plastic packages, making it suitable for space-constrained designs in consumer and automotive electronics.
Direct substitutes must match the 40 V rating, N-channel configuration, and DFN2020MD-6 package. Verify pinout compatibility and ensure equivalent RDS(on) and thermal characteristics. Cross-reference with Nexperia's replacement guide for validated alternatives.