BUK6D43-60EX

$0.13

Description：MOSFET N-CH 60V 5A DFN2020MD-6
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Bulk

SKU:213b8ae7579d Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 5A DFN2020MD-6
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：43mOhm @ 5A, 10V
Vgs(th) (Max) @ Id：2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：18 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：590 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：15W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：DFN2020MD-6
Package / Case：6-UDFN Exposed Pad

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BUK6D43-60EX

Overview

The Nexperia BUK6D43-60EX is an N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It is housed in a DFN2020MD-6 (SOT1220) surface-mount package measuring 2 x 2 x 0.65 mm. The device supports a drain-source voltage of 60 V and a continuous drain current of 13 A at 25 °C. It features a maximum on-state resistance of 43 mΩ at VGS = 10 V and ID = 5 A. Total power dissipation reaches 15 W at 25 °C, with an extended junction temperature range up to 175 °C.

Feature Summary

AEC-Q101 qualified for automotive reliability
Side wettable flanks enable optical solder inspection
Ultra-thin leadless SMD plastic package design

Applications

Relay driver
High-speed line driver
Low-side load switch
Switching circuits

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details. Confirm that the component meets all required automotive qualification standards before integration into final designs. Ensure thermal management aligns with specified junction temperature limits during operation.

Selection Notes

Select this component for applications requiring low on-state resistance within a compact footprint. The extended temperature range supports high-power density environments. Verify gate drive requirements against threshold voltage specifications to ensure efficient switching performance under varying load conditions.

Part Context

This part belongs to the Nexperia BUK6D series of 60 V N-channel Trench MOSFETs. It shares the DFN2020MD-6 package form factor with other variants in the family, offering standardized mounting dimensions while providing distinct electrical characteristics tailored for specific current and resistance requirements.