BUK6D56-60EX

$0.44

Description：MOSFET N-CH 60V 4A/11A 6DFN
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:a756c27067c2 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 60V 4A/11A 6DFN
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：60 V
Current - Continuous Drain (Id) @ 25°C：4A (Ta), 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：56mOhm @ 4A, 10V
Vgs(th) (Max) @ Id：2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：12 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：435 pF @ 30 V
FET Feature：-
Power Dissipation (Max)：2W (Ta), 15W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：DFN2020MD-6
Package / Case：6-UDFN Exposed Pad

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BUK6D56-60EX

Overview

The BUK6D56-60EX is an N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It operates within a DFN2020MD-6 (SOT1220) leadless plastic package. The device supports a drain-source voltage of 60 V and a continuous drain current of 11 A at 25 °C case temperature. Key electrical parameters include a maximum on-state resistance of 56 mΩ at VGS = 10 V and ID = 4 A, with a total gate charge of 7.5 nC. It features an extended junction temperature range up to 175 °C and includes electrostatic discharge protection exceeding 2 kV HBM.

Feature Summary

AEC-Q101 qualified for automotive applications
Side wettable flanks enable optical solder inspection
ESD protection rating greater than 2 kV HBM
Extended operating temperature range up to 175 °C

Applications

Relay driver
High-speed line driver
Low-side load switch
Switching circuits

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm packaging configuration. Confirm that the component meets AEC-Q101 qualification requirements if intended for automotive deployment. Ensure design safeguards are implemented to prevent operation beyond absolute maximum ratings. Consult the most recent product data sheet prior to finalizing designs.

Selection Notes

Select this component for low-side switching applications requiring high thermal performance in compact spaces. The DFN2020MD-6 package provides efficient heat dissipation through exposed pads. Verify that the 60 V breakdown voltage aligns with system requirements. Consider the 56 mΩ on-resistance for conduction loss calculations at expected load currents.

Part Context

This part belongs to the Nexperia BUK6D series of medium power N-channel MOSFETs. These devices utilize Trench technology to achieve low on-state resistance within small surface-mount packages. The series is designed for general-purpose switching and load control applications across industrial and automotive sectors.