BUK6D81-80EX

$0.37

Description：MOSFET N-CH 80V 3.2A/9.8A 6DFN
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:c485b938953a Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 80V 3.2A/9.8A 6DFN
Series：-
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：80 V
Current - Continuous Drain (Id) @ 25°C：3.2A (Ta), 9.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：81mOhm @ 3.2A, 10V
Vgs(th) (Max) @ Id：2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：14.9 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：504 pF @ 40 V
FET Feature：-
Power Dissipation (Max)：2W (Ta), 18.8W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：DFN2020MD-6
Package / Case：6-UDFN Exposed Pad

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BUK6D81-80EX

Overview

The BUK6D81-80E is an N-channel enhancement mode Field-Effect Transistor utilizing Trench MOSFET technology. It operates within a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device plastic package. The device supports an extended junction temperature range up to 175 °C and features side wettable flanks for optical solder inspection. It includes ElectroStatic Discharge protection exceeding 2 kV HBM and holds AEC-Q101 qualification. Key electrical parameters include a drain-source voltage of 80 V, a gate-source voltage limit of ±20 V, and a continuous drain current of 9.8 A at 25 °C case temperature.

Feature Summary

Trench MOSFET technology for enhanced performance
Extended temperature range capability up to 175 °C
Side wettable flanks enabling optical solder inspection
AEC-Q101 qualified for automotive reliability

Applications

Relay driver circuits
High-speed line drivers
Low-side load switching
General switching applications

Procurement Notes

Verify the specific ordering suffix 'E' corresponds to the required packaging configuration, as datasheet details regarding reel or tape specifications are not included in this document. Confirm that the DFN2020MD-6 package dimensions align with your PCB footprint requirements. Ensure design safeguards account for the absolute maximum ratings to prevent permanent damage during operation.

Selection Notes

Select this component when an N-channel MOSFET with high thermal stability and automotive qualification is required. The 80 V rating suits low-voltage DC-DC converters and motor control interfaces. Consider the DFN2020MD-6 package for space-constrained designs requiring efficient heat dissipation through the exposed drain pad. Verify gate drive compatibility with the specified threshold voltage characteristics.

Part Context

This part belongs to Nexperia's portfolio of N-channel Trench MOSFETs designed for general-purpose and automotive applications. The DFN2020MD-6 package provides a compact form factor suitable for modern surface-mount assembly processes. The product is manufactured using advanced trench technology to optimize on-state resistance and switching performance within a thermally enhanced leadless outline.