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Product Detailed Parameters
- Description：MOSFET N-CH 30V 120A I2PAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tube
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：2.2mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：229 nC @ 10 V
- Vgs (Max)：±16V
- Input Capacitance (Ciss) (Max) @ Vds：14964 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：306W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：I2PAK
- Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
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Overview
The BUK6E2R0-30C,127 is an N-channel TrenchMOS intermediate level FET in a plastic SOT226 (I2PAK) package. It features a drain-source voltage of 30 V and a continuous drain current of 120 A at 25 °C mounting base temperature. The device has a maximum total power dissipation of 306 W. Static characteristics include a typical RDSon of 2.2 mΩ at VGS=10V and ID=25A. It supports junction temperatures up to 175 °C and includes avalanche ruggedness with non-repetitive energy ratings.
Feature Summary
- Qualified to AEC-Q101 standard for high-performance automotive applications
- Operates in thermally demanding environments with a 175 °C rating
- Compatible with intermediate level gate drive sources
Applications
- 12 V Automotive systems
- Electric and electro-hydraulic power steering
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details and manufacturing origin. Ensure the component meets the required AEC-Q101 qualification standards for the intended automotive application environment before finalizing procurement specifications.
Selection Notes
Select this component for designs requiring robust power switching in automotive environments. The intermediate level gate drive compatibility simplifies driver circuit design compared to logic-level devices. Consider the thermal resistance and mounting base temperature constraints when calculating power dissipation limits for the specific PCB layout.
Part Context
This part belongs to the Nexperia BUK6E series of N-channel TrenchMOS FETs. These devices utilize advanced TrenchMOS technology to achieve low on-state resistance and high efficiency. The series is specifically engineered for high-current applications where reliability under thermal stress is critical.
Replacement Considerations
Check pinout compatibility and electrical parameters such as RDSon and VGS(th) when substituting. Verify that any alternative device meets the same AEC-Q101 automotive qualification requirements and physical package dimensions.
