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Product Detailed Parameters
- Description：NEXPERIA BUK6E2R3-40C - 120A, 40
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：2.3mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：260 nC @ 10 V
- Vgs (Max)：±16V
- Input Capacitance (Ciss) (Max) @ Vds：15100 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：306W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Through Hole
- Supplier Device Package：I2PAK
- Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
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Overview
The BUK6E2R3-40C,127 is an N-channel TrenchMOS intermediate level FET designed for high-performance automotive applications. It features a 40 V drain-source voltage rating and supports a continuous drain current of 120 A at a mounting base temperature of 25 °C. The device exhibits a maximum on-state resistance of 22.3 mΩ at VGS = 10 V and ID = 25 A. Total power dissipation reaches 306 W under standard thermal conditions. The component operates within a junction temperature range of -55 °C to 175 °C.
Feature Summary
- Compliant with the AEC Q101 standard for automotive reliability
- Optimized for intermediate level gate drive sources
- Capable of operation in thermally demanding environments up to 175 °C
Applications
- 12 V Automotive systems
- Electric and electro-hydraulic power steering
- Motors, lamps and solenoid control
- Start-Stop micro-hybrid applications
- Transmission control
- Ultra high performance power switching
Procurement Notes
Verify the specific ordering suffix
Selection Notes
Select this component when an N-channel MOSFET requires robust avalanche ruggedness and compatibility with intermediate-level gate drivers. The I2PAK package facilitates efficient heat dissipation through the mounting base, making it suitable for high-current switching tasks where thermal management is critical. Ensure the application voltage does not exceed the 40 V limit and that gate drive signals align with the specified threshold characteristics.
Part Context
This part belongs to Nexperia's BUK6 series of N-channel TrenchMOS FETs, which utilize advanced trench technology for low on-resistance and high efficiency. The BUK6E2R3-40C specifically targets automotive markets, offering a balance of high current handling and thermal stability in the TO-262 (SOT226) plastic package.
Replacement Considerations
Consult official Nexperia documentation for qualified substitutes. Cross-referencing requires matching voltage ratings, current capabilities, package type, and thermal characteristics.
