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Product Detailed Parameters
- Description：MOSFET P-CH 40V 64A LFPAK56
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：40 V
- Current - Continuous Drain (Id) @ 25°C：64A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：14mOhm @ 10.8A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：64 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2300 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：110W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK56, Power-SO8
- Package / Case：SC-100, SOT-669
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Overview
The BUK6Y14-40PX is a P-channel enhancement mode MOSFET utilizing Trench MOSFET technology, housed in an LFPAK56 (Power-SO8) SMD plastic package. It features a drain-source voltage of -40 V and a continuous drain current of -64 A at 25 °C mounting base temperature. The device exhibits a typical on-state resistance of 14 mΩ at VGS = -10 V and 25 °C. Total power dissipation reaches 110 W under specified conditions. It supports junction temperatures up to 175 °C and includes a mounting base connected to the drain for thermal management.
Feature Summary
- AEC-Q101 qualified for high-performance automotive applications
- High thermal power dissipation capability with 175 °C rating
- Trench MOSFET technology for low conduction losses
Applications
- Reverse battery protection
- Power management
- High-side load switch
- Motor drive
Procurement Notes
Verify the specific ordering suffix 'PX' against the official Nexperia datasheet or distributor documentation to confirm packaging details such as reel size or tape specifications. Ensure the component matches the standard BUK6Y14-40P electrical characteristics defined in the product data sheet. Confirm RoHS compliance and REACH SVHC status through the manufacturer's latest release notes before finalizing procurement.
Selection Notes
Select this component for designs requiring robust reverse battery protection or high-side switching in automotive environments. The LFPAK56 package offers superior thermal performance compared to standard SO-8 packages due to the exposed mounting base. Verify that the gate drive voltage levels are compatible with the threshold and on-resistance specifications across the expected operating temperature range.
Part Context
This part belongs to the Nexperia BUK6Y series of P-channel Trench MOSFETs designed for automotive use. The series leverages advanced trench gate technology to achieve low on-state resistance while maintaining high reliability standards. These devices are engineered to meet the stringent requirements of modern vehicle electronics, providing efficient power control in thermally demanding scenarios.
Replacement Considerations
Check for direct substitutes within the BUK6Y series with matching voltage and current ratings. Verify pinout compatibility, specifically the source-drain-gate configuration and mounting base connection. Ensure thermal resistance values and package dimensions align with existing PCB layouts if swapping between different manufacturers or variants.
