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Product Detailed Parameters
- Description：MOSFET P-CH 30V 45A LFPAK56
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：19mOhm @ 9.5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：35 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：1260 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：66W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK56, Power-SO8
- Package / Case：SC-100, SOT-669
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Overview
The Nexperia BUK6Y19-30P is a P-channel enhancement mode MOSFET utilizing Trench MOSFET technology, housed in an LFPAK56 (Power SO8) SMD plastic package. It features a drain-source voltage of -30 V and a continuous drain current of -45 A at 25 °C mounting base temperature. The device exhibits a typical on-state resistance of 15 mΩ at VGS = -10 V and supports a total power dissipation of 66 W. Qualified to the AEC-Q101 standard, it operates within a junction temperature range of -55 °C to +175 °C.
Feature Summary
- AEC-Q101 qualified for high-performance automotive applications
- High thermal power dissipation capability with 175 °C rating
- Trench MOSFET technology for enhanced performance
Applications
- Reverse battery protection
- Power management
- High-side load switch
- Motor drive
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact packaging and reel specifications. Confirm that the component meets all relevant AEC-Q101 qualification requirements for your intended automotive application environment before finalizing procurement decisions.
Selection Notes
Select this component for designs requiring robust P-channel switching in thermally demanding environments. Ensure gate drive voltages align with the specified VGS limits and consider the thermal resistance characteristics when designing heat dissipation solutions for high-current loads.
Part Context
This part belongs to Nexperia's portfolio of automotive-grade discrete semiconductors. It utilizes Trench MOSFET technology to deliver high performance in a compact surface-mount package, designed specifically to meet the rigorous reliability standards required for modern automotive electronic systems.
Replacement Considerations
Consult official Nexperia substitution guides for verified alternatives. Do not assume pin-compatible replacements without verifying electrical parameters and thermal characteristics against the original datasheet.
