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Product Detailed Parameters
- Description：MOSFET P-CH 60V 30A LFPAK56
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：60 V
- Current - Continuous Drain (Id) @ 25°C：30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：33mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：69 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2590 pF @ 30 V
- FET Feature：-
- Power Dissipation (Max)：110W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：LFPAK56, Power-SO8
- Package / Case：SC-100, SOT-669
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Overview
The BUK6Y33-60PX is a P-channel enhancement mode MOSFET utilizing Trench technology, housed in an LFPAK56 (Power-SO8) SMD plastic package. It features a drain-source voltage of -60 V and a continuous drain current of -30 A at 25 °C mounting base temperature. The device supports a total power dissipation of 110 W and operates with a junction temperature up to 175 °C. Its on-state resistance is typically 26 mΩ at VGS = -10 V. Qualified to the AEC-Q101 standard, it is designed for high-performance automotive applications.
Feature Summary
- High thermal power dissipation capability suitable for thermally demanding environments
- Qualified to the AEC-Q101 standard for automotive reliability
- Utilizes Trench MOSFET technology for enhanced performance
Applications
- Reverse battery protection
- Power management
- High-side load switch
- Motor drive
Procurement Notes
Verify the specific ordering suffix 'X' against official Nexperia documentation to confirm tape-and-reel packaging specifications. Ensure the component meets AEC-Q101 qualification requirements for your target automotive application. Confirm that the LFPAK56 package dimensions align with your PCB layout constraints before finalizing procurement.
Selection Notes
Select this component for designs requiring robust reverse battery protection or high-side switching in automotive systems. The P-channel configuration simplifies gate drive requirements compared to N-channel alternatives. Consider the 175 °C junction temperature rating for operation in high-thermal environments. Evaluate the low on-state resistance to minimize conduction losses in power management circuits.
Part Context
This part belongs to Nexperia's portfolio of AEC-Q101 qualified discrete semiconductors. It utilizes Trench MOSFET technology to deliver high efficiency and thermal performance. The LFPAK56 package provides a compact solution with exposed metal pads for optimal heat dissipation, supporting space-constrained automotive electronics design.
Replacement Considerations
Consult official Nexperia substitution guides for verified equivalents. Cross-reference pinouts, voltage ratings, and thermal characteristics when evaluating alternative components.
