BUK7109-75ATE,118

$2.36

Description：MOSFET N-CH 75V 75A SOT426
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:c3c3f38927c4 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 75V 75A SOT426
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：75 V
Current - Continuous Drain (Id) @ 25°C：75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：121 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：4700 pF @ 25 V
FET Feature：Temperature Sensing Diode
Power Dissipation (Max)：272W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-5, D2PAK (4 Leads + Tab), TO-263BB

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BUK7109-75ATE,118

Overview

The BUK7109-75ATE is a standard level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology. It features an integrated temperature sense diode and ESD protection diodes, designed for automotive critical applications compliant with AEC-Q101. Key electrical parameters include a drain-source voltage of 75 V, a continuous drain current of 75 A at a mounting base temperature of 25 °C, and a typical on-state resistance of 89 mΩ at 10 V gate drive. The device supports junction temperatures up to 175 °C and includes avalanche ruggedness rated at 739 mJ.

Feature Summary

Enables responsive temperature monitoring through an integrated temperature sensor diode
Provides electrostatic robustness via integrated protection diodes
Reduces conduction losses due to low on-state resistance characteristics

Applications

Electrical Power Assisted Steering (EPAS)
Variable Valve Timing for engines

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm package type and reel specifications. Confirm current product status as automotive-grade components may undergo lifecycle changes. Ensure compatibility with existing thermal management designs given the D2PAK package constraints. Cross-reference datasheet revision dates to validate parameter accuracy before finalizing procurement orders.

Selection Notes

Select this component for high-current automotive switching applications requiring precise thermal feedback. The standard level gate drive compatibility simplifies driver circuit design compared to logic-level alternatives. Evaluate the 75 A current rating against peak load requirements and ensure adequate heat sinking to maintain junction temperatures within the specified operational range during continuous duty cycles.

Part Context

This part belongs to the BUK71 series of N-channel TrenchPLUS FETs from Nexperia. These devices are engineered for robust performance in demanding automotive environments. The integration of sensing capabilities distinguishes it from standard power MOSFETs by allowing direct thermal monitoring without additional discrete sensors.