BUK7208-40B,118

$1.39

Description：MOSFET N-CH 40V 75A DPAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:037ca3e3a884 Category: Single FETs, MOSFETs Brand: Nexperia USA Inc.

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Product introduction

Product Detailed Parameters

Description：MOSFET N-CH 40V 75A DPAK
Series：TrenchMOS™
Mfr：Nexperia USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id：4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：35 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2493 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：167W (Tc)
Operating Temperature：-55°C ~ 185°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：DPAK
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

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BUK7208-40B,118

Overview

The BUK7208-40B,118 is a standard level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a SOT428 (DPAK) plastic package. It features a drain-source voltage of 40 V and a continuous drain current of 75 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 6.68 mΩ at VGS = 10 V and ID = 25 A. It supports junction temperatures up to 185 °C and includes an integrated source-drain diode with a reverse recovery time of 50 ns.

Feature Summary

AEC-Q101 qualified for automotive critical applications
Low conduction losses due to low on-state resistance
Suitable for standard level gate drive sources
Operates in thermally demanding environments with 185 °C rating

Applications

12 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids

Procurement Notes

Verify the specific ordering suffix

Selection Notes

Select this component when designing circuits requiring robust N-channel switching with standard logic-level gate drive compatibility. The DPAK package provides high thermal dissipation capabilities suitable for power densities up to 167 W. Ensure the application operates within the 40 V drain-source voltage limit and accounts for the 75 A current constraint imposed by the package thermal characteristics rather than the silicon die capability.

Part Context

This part belongs to Nexperia's TrenchMOS family of standard level N-channel FETs. The series is engineered for high-efficiency power switching in both industrial and automotive sectors. The DPAK package variant offers a balance between current handling capacity and surface-mount footprint, making it a common choice for board-level power management solutions where moderate isolation and heat sinking are required.