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Product Detailed Parameters
- Description：MOSFET N-CH 55V 55A DPAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：15mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：50 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2107 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：115W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：DPAK
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The BUK7215-55A is a standard level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology. Designed for automotive critical applications, it complies with AEC-Q101 standards. The device features a drain-source voltage of 55 V and a continuous drain current of 62 A at 25 °C mounting base temperature. It exhibits a typical on-state resistance of 13 mΩ at 10 V gate drive and supports junction temperatures up to 175 °C. Total power dissipation reaches 115 W under specified conditions.
Feature Summary
- Compliant with AEC-Q101 automotive qualification standards
- Utilizes TrenchMOS technology for low conduction losses
- Compatible with standard level gate drive sources
- Rated for thermally demanding environments up to 175 °C
Applications
- 12 V and 24 V loads
- Automotive and general purpose power switching
- Motors, lamps and solenoids
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm package type and reel specifications. Confirm current product status and availability through authorized distributors or direct sales channels. Ensure design compliance with absolute maximum ratings and thermal management requirements before integration.
Selection Notes
Select this component for designs requiring robust automotive-grade performance in high-current switching applications. The low on-state resistance minimizes power loss during conduction. Verify that the gate drive circuitry aligns with standard level requirements and that thermal solutions support the 175 °C junction temperature rating for reliable operation.
Part Context
This part belongs to the Nexperia BUK series of N-channel TrenchMOS FETs. These devices are engineered for high-efficiency power switching in automotive and industrial sectors. The series emphasizes durability and thermal stability, leveraging advanced trench gate technology to achieve superior performance metrics compared to conventional planar MOSFETs.
Replacement Considerations
Consult official Nexperia substitution guides for verified alternatives. Cross-reference pinout compatibility and electrical parameters such as VDS, ID, and RDS(on) when evaluating potential replacements.
