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Product Detailed Parameters
- Description：MOSFET N-CH 55V 11A DPAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：150mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：5.5 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：322 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：36W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：DPAK
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The BUK72150-55A is a standard level N-channel enhancement mode Field-Effect Transistor utilizing TrenchMOS technology in a DPAK (SOT428) plastic package. It features a drain-source voltage of 55 V and a continuous drain current of 11 A at 25 °C mounting base temperature. The device exhibits a maximum on-state resistance of 150 mΩ at VGS = 10 V and ID = 5 A. Total power dissipation reaches 36 W at 25 °C, with an operating junction temperature range from -55 °C to +175 °C. Gate-source voltage limits are ±20 V.
Feature Summary
- Qualified for automotive critical applications under AEC-Q101 standards
- Optimized for low conduction losses through reduced on-state resistance
- Compatible with standard level gate drive sources
- Designed for thermally demanding environments with a 175 °C rating
Applications
- 12 V and 24 V load switching
- Automotive systems
- General purpose power switching
- Motors, lamps and solenoids
Procurement Notes
Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details and compliance status. Confirm current product lifecycle status as automotive-grade components may undergo obsolescence notices. Ensure design reviews account for the specified thermal resistance values and absolute maximum ratings to prevent device stress during operation.
Selection Notes
Select this component for designs requiring robust automotive qualification and high thermal stability up to 175 °C. The DPAK package suits surface-mount applications needing moderate power handling. Verify that gate drive circuits align with the standard level requirements and that thermal management strategies accommodate the specified junction-to-ambient resistance characteristics.
Part Context
This N-channel MOSFET belongs to Nexperia's TrenchMOS family, engineered for efficiency in power switching roles. The SOT428 package provides a balance between current capacity and board space. Its automotive qualification ensures reliability in vehicle electronics, distinguishing it from general-purpose industrial counterparts lacking such rigorous testing protocols.
Replacement Considerations
Consult official Nexperia substitution guides for verified equivalents. Cross-reference pinouts, thermal characteristics, and electrical limits when considering alternative manufacturers' parts to ensure functional compatibility without redesigning the host circuit.
