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Product Detailed Parameters
- Description：MOSFET N-CH 55V 55A DPAK
- Series：TrenchMOS™
- Mfr：Nexperia USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT),Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：55 V
- Current - Continuous Drain (Id) @ 25°C：55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：19mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：-
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2108 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：114W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：DPAK
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The BUK7219-55A,118 is an N-channel TrenchMOS standard level FET in a SOT428 (DPAK) plastic package. It features a drain-source voltage of 55 V and a continuous drain current of 55 A at 25 °C mounting base temperature. The device supports a junction temperature up to 175 °C with a total power dissipation of 114 W. Key electrical parameters include a maximum on-state resistance of 38 mΩ at 175 °C and a non-repetitive avalanche energy rating of 120 mJ.
Feature Summary
- Low conduction losses due to low on-state resistance
- Q101 compliant for automotive critical applications
- Suitable for standard level gate drive sources
- Operates in thermally demanding environments with a 175 °C rating
Applications
- 12 V and 24 V loads
- Automotive and general purpose power switching
- Motors, lamps and solenoids
Procurement Notes
Verify the specific ordering suffix and package variant against the official Nexperia datasheet before procurement. Confirm that the component meets all required automotive qualification standards if intended for critical vehicle systems. Ensure thermal management designs align with the specified junction-to-mounting base thermal resistance limits provided in the documentation.
Selection Notes
Select this component for applications requiring robust performance in standard level gate drive circuits. The device is optimized for automotive environments where high junction temperatures are expected. Consider the DPAK package constraints for thermal dissipation and ensure the gate drive voltage matches the standard level requirements for optimal on-state resistance performance.
Part Context
This part belongs to the Nexperia BUK72xx series of N-channel TrenchMOS FETs. These devices utilize TrenchMOS technology to achieve low on-state resistance within a plastic surface-mounted package. The series is designed to meet AEC-Q101 standards, ensuring reliability for automotive applications while maintaining compatibility with standard logic-level gate drivers.
Replacement Considerations
Consult the official Nexperia replacement guide or datasheet for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' components without verifying pinout, electrical ratings, and package dimensions.
