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Product Detailed Parameters
- Description：MOSFET N-CH 75V 45A DPAK
- Series：TrenchMOS™
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：75 V
- Current - Continuous Drain (Id) @ 25°C：45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：26mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id：4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs：48 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2385 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：158W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：DPAK
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
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Overview
The BUK7226-75A/C1,118 is a standard level N-channel enhancement mode Field-Effect Transistor (FET) utilizing Nexperia General Purpose Automotive (GPA) TrenchMOS technology. Designed for automotive critical applications, it features a 75 V drain-source voltage rating and supports continuous drain currents up to 45 A at a mounting base temperature of 25 °C. The device exhibits a low on-state resistance of 26 mΩ at 25 °C and operates within a junction temperature range of -55 °C to 175 °C. It is housed in a DPAK plastic surface-mounted package (SOT428).
Feature Summary
- Qualified to the AEC Q101 standard for use in automotive critical applications.
- Rated for operation at junction temperatures up to 175 °C.
- Compatible with standard level gate drive requirements.
Applications
- Automotive systems
- General purpose power switching
- Motor control
- Lamp driving
- Solenoid actuation
Procurement Notes
Verify the specific ordering suffix against the manufacturer's current documentation to confirm package type and reel specifications. Ensure the component status matches the project timeline, as product availability may change. Cross-reference the datasheet revision date with the latest official release to validate all electrical parameters and thermal characteristics before finalizing design integration.
Selection Notes
Select this component for designs requiring robust performance in automotive environments with standard level logic compatibility. Evaluate the thermal resistance from junction to ambient and the safe operating area curves to ensure adequate heat dissipation under expected load conditions. Consider the internal source inductance when designing high-speed switching circuits to minimize voltage overshoot and ringing effects during turn-off transitions.
Part Context
This part belongs to the BUK7226 series of N-channel TrenchMOS FETs manufactured by Nexperia. The series utilizes GPA technology optimized for automotive reliability. The specific model denotes a 75 V breakdown voltage variant packaged in the SOT428 form factor, distinguishing it from other voltage ratings or package options within the broader family lineup.
Replacement Considerations
Consult the official Nexperia replacement guide for verified functional equivalents. Do not substitute based solely on pinout compatibility without verifying absolute maximum ratings and thermal performance data.
FAQ
What is the maximum non-repetitive drain-source avalanche energy?
The maximum non-repetitive drain-source avalanche energy is 215 mJ, measured under conditions of ID = 45 A, Vsup ≤ 75 V, RGS = 50 Ω, VGS = 10 V, and an initial junction temperature of 25 °C.
How does the on-state resistance vary with temperature?
The drain-source on-state resistance increases with junction temperature. At 175 °C, the typical resistance rises to 54 mΩ compared to 26 mΩ at 25 °C, as indicated by the normalized resistance factor graph.
